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STD10P10F6
+BOMMOSFET P-CH 100V 10A DPAK
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メーカーRFE/フューゼテック
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メーカー品番 #STD10P10F6
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データシート STD10P10F6 DataSheet
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パッケージ TO-252-3
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在庫状況4788
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ F6 |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 10A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 180mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 16.5 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 864 pF @ 80 V |
| Power Dissipation (Max) | 40W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
概要
Description
"STD10P10F6" typically refers to a specific electronic component, particularly a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This type of component is used in electronic circuits for switching and amplification. The STD10P10F6 is a P-channel MOSFET, meaning it conducts when a negative voltage is applied to its gate relative to the source. This component is usually designed for high-speed switching applications and can handle significant current with low on-state resistance, enhancing efficiency in power management tasks.
Manufactured using advanced semiconductor technology, the STD10P10F6 is often used in various applications such as power supply units, DC-DC converters, and motor control circuits. Key features typically include high-speed switching capability, low power loss, and robustness under different operational conditions. Its specifications include parameters like maximum drain-source voltage, current handling capacity, and thermal resistance, making it suitable for commercial and industrial applications where efficient power management is crucial.
Manufactured using advanced semiconductor technology, the STD10P10F6 is often used in various applications such as power supply units, DC-DC converters, and motor control circuits. Key features typically include high-speed switching capability, low power loss, and robustness under different operational conditions. Its specifications include parameters like maximum drain-source voltage, current handling capacity, and thermal resistance, making it suitable for commercial and industrial applications where efficient power management is crucial.
Equivalent
The STD10P10F6 is a P-channel MOSFET from STMicroelectronics. Equivalent products would include other P-channel MOSFETs with similar specifications, such as the IRF9540 from Infineon, FQP27P06 from ON Semiconductor, and the SI4463DY from Vishay. It's important to verify the voltage, current ratings, and package compatibility when selecting an equivalent component. Always consult datasheets for precise matching of electrical characteristics and pin configurations.
Features
The term "STD10P10F6" seems to refer to a specific electronic component, likely a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various applications. Here are its likely key features:
1. Voltage and Current Ratings: Capable of handling a drain-source voltage (Vds) of approximately 100V and a continuous drain current (Id) of around 10A.
2. Package Type: Typically available in a DPAK or TO-252 package, suitable for surface mounting on PCBs.
3. Rds(on): Low on-state resistance (Rds(on)), which minimizes power loss and improves efficiency in switching applications.
4. Fast Switching: Designed for high-speed switching, making it suitable for applications like power converters and motor drives.
5. Thermal Performance: Good thermal characteristics, often featuring a low thermal resistance junction-to-case to support efficient heat dissipation.
6. Applications: Commonly used in power supply units, DC-DC converters, and other power management systems.
Please consult the manufacturer's datasheet for precise specifications and additional details.
1. Voltage and Current Ratings: Capable of handling a drain-source voltage (Vds) of approximately 100V and a continuous drain current (Id) of around 10A.
2. Package Type: Typically available in a DPAK or TO-252 package, suitable for surface mounting on PCBs.
3. Rds(on): Low on-state resistance (Rds(on)), which minimizes power loss and improves efficiency in switching applications.
4. Fast Switching: Designed for high-speed switching, making it suitable for applications like power converters and motor drives.
5. Thermal Performance: Good thermal characteristics, often featuring a low thermal resistance junction-to-case to support efficient heat dissipation.
6. Applications: Commonly used in power supply units, DC-DC converters, and other power management systems.
Please consult the manufacturer's datasheet for precise specifications and additional details.
Pinout
The STD10P10F6 is a P-channel MOSFET produced by STMicroelectronics. It typically comes in a DPAK or TO-252 package with three primary pins and an additional tab that can function as a fourth connection point. The pin configuration is as follows:
1. Gate (G): This pin is responsible for activating or deactivating the MOSFET. It controls the flow of current between the source and drain.
2. Source (S): This is the pin through which the current enters the MOSFET.
3. Drain (D): This pin is where the current exits the MOSFET.
The tab, often connected to the drain, serves as a heat sink to dissipate heat generated during operation. The STD10P10F6 is typically used for switching applications due to its low on-resistance and high-speed switching capabilities.
1. Gate (G): This pin is responsible for activating or deactivating the MOSFET. It controls the flow of current between the source and drain.
2. Source (S): This is the pin through which the current enters the MOSFET.
3. Drain (D): This pin is where the current exits the MOSFET.
The tab, often connected to the drain, serves as a heat sink to dissipate heat generated during operation. The STD10P10F6 is typically used for switching applications due to its low on-resistance and high-speed switching capabilities.
Manufacturer
The STD10P10F6 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products. The company serves a variety of sectors, including industrial, automotive, personal electronics, communications equipment, and the Internet of Things (IoT). It is known for its expertise in integrated circuits, microcontrollers, sensors, and power management solutions.
Application
The STD10P10F6 is a P-channel MOSFET commonly used in various electronic applications. Its primary application areas include:
1. Power Management: Used in DC-DC converters for efficient power regulation.
2. Switching Circuits: Ideal for low-side and high-side switching in electronic devices.
3. Load Switching: Suitable for controlling power loads in battery-operated devices.
4. Motor Control: Can be used in circuits for controlling small motors.
5. LED Drivers: Used in circuits for driving LEDs in lighting applications.
6. Protection Circuits: Employed in circuits to protect against over-voltage and over-current conditions.
Its low on-state resistance and fast switching capabilities make it suitable for these applications.
1. Power Management: Used in DC-DC converters for efficient power regulation.
2. Switching Circuits: Ideal for low-side and high-side switching in electronic devices.
3. Load Switching: Suitable for controlling power loads in battery-operated devices.
4. Motor Control: Can be used in circuits for controlling small motors.
5. LED Drivers: Used in circuits for driving LEDs in lighting applications.
6. Protection Circuits: Employed in circuits to protect against over-voltage and over-current conditions.
Its low on-state resistance and fast switching capabilities make it suitable for these applications.
Package
The STD10P10F6 is an N-channel power MOSFET, and it typically comes in a TO-220 package. This package type is commonly used for power semiconductors, providing a balance between size and thermal performance, making it suitable for various power applications.
