STD18N65M5

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STD18N65M5

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MOSFET N-CH 650V 15A DPAK

  • メーカーRFE/フューゼテック

  • メーカー品番 #STD18N65M5

  • データシート STD18N65M5 DataSheet

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仕様

属性
Series MDmesh™ V
Part Status Active
Base Product Number STD18
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1240 pF @ 100 V
Power Dissipation (Max) 110W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Cut Tape (CT), Tape & Reel (TR)

概要

Description

The STD18N65M5 is a high-voltage N-channel Power MOSFET designed for applications requiring high efficiency and power density. Manufactured by STMicroelectronics, this MOSFET features a drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 18A. It is part of the MDmesh™ M5 series, which is known for its low on-resistance, fast switching capabilities, and high avalanche ruggedness, making it ideal for use in power supplies, converters, and motor drives.
The device is encapsulated in a TO-220 package, which provides efficient thermal dissipation, enabling it to handle high-power applications effectively. Its design includes advanced features that reduce losses and improve efficiency, such as the optimized gate charge and reduced gate-to-drain charge. This MOSFET is particularly suited for hard-switching topologies and resonant topologies in both industrial and consumer electronics due to its robustness and reliability.
Overall, the STD18N65M5 combines high performance with ease of integration, making it a versatile component for power management in various electronic applications.

Equivalent

The STD18N65M5 is a power MOSFET, and its equivalents include the following similar specification MOSFETs: STMicroelectronics STP18N65M5, Vishay IRFP460, Infineon IPW65R045CFD, and ON Semiconductor NTP18N50. When selecting an equivalent, ensure the voltage, current ratings, package type, and other critical parameters match your application's requirements. Always verify the datasheets for compatibility.

Features

The STD18N65M5 is a Power MOSFET designed for use in electronic systems that require high efficiency and robust performance. Here are its key features:
1. N-Channel MOSFET: It operates as an N-channel enhancement-mode MOSFET.

2. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 18A, making it suitable for high-voltage applications.
3. RDS(on): It provides a low on-resistance, minimizing power loss and improving efficiency.
4. High-Speed Switching: The device supports fast switching speeds, which is critical for high-frequency applications.
5. Low Gate Charge: It features a low gate charge (Q_g), which reduces the power needed to drive the MOSFET, improving overall efficiency.
6. Robust Design: Designed to handle high power levels, it is reliable in harsh environments.
7. Applications: Ideal for use in switching power supplies, motor control, lighting systems, and other high-power applications.
This combination of features makes the STD18N65M5 a versatile and efficient choice for various power management applications.

Pinout

The STD18N65M5 is a power MOSFET from STMicroelectronics. It is designed for high-efficiency switching applications. The device typically comes in a DPAK package, which has three main pins plus a tab used for electrical and thermal conduction.
1. Pin Count:
- The STD18N65M5 has 3 main pins plus the tab:
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
- Tab: Drain (connected to the same point as Pin 2 internally)
2. Function:
- Gate (G): This pin is used to control the ON/OFF state of the MOSFET. Applying a voltage above a certain threshold will turn the MOSFET on, allowing current to flow between the drain and source.
- Drain (D): Current flows from the drain to the source when the MOSFET is turned on.
- Source (S): Acts as the return path for the current flowing through the device.
This MOSFET is commonly used in applications such as power supplies, motor drives, and other high-efficiency power conversion systems.

Manufacturer

The STD18N65M5 is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. STMicroelectronics is one of the world's leading semiconductor companies, providing a wide range of products and solutions for various applications across different industries. The company focuses on segments such as automotive, industrial, personal electronics, communications equipment, and the Internet of Things (IoT). Its product portfolio includes microcontrollers, sensors, power devices, and integrated circuits, among others. STMicroelectronics is known for its innovation and commitment to sustainability, aiming to create products that enhance energy efficiency and support the development of smart technologies.

Application

The STD18N65M5 is a power MOSFET that is commonly used in various applications due to its high voltage capabilities and efficiency. Key application areas include:
1. Switching Power Supplies: Used in AC-DC and DC-DC converters for efficient energy conversion.
2. Motor Drives: Suitable for driving motors in industrial and consumer applications.
3. Lighting Systems: Employed in LED drivers and other lighting applications for power regulation.
4. Inverters: Used in solar inverters and uninterruptible power supplies (UPS) for energy management.
5. Audio Amplifiers: Utilized in Class D amplifiers due to fast switching capabilities.
Its high-speed performance and robustness make it ideal for these and other high-performance electronic applications.

Package

The STD18N65M5 is a power MOSFET typically used in electronic circuits. It comes in a DPAK package, which is a surface-mount package designed for medium power applications, offering a compact size and good thermal performance.

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