画像は参考用です
STD18N65M5
+BOMMOSFET N-CH 650V 15A DPAK
-
メーカーRFE/フューゼテック
-
メーカー品番 #STD18N65M5
-
データシート STD18N65M5 DataSheet
-
在庫状況4977
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | MDmesh™ V |
| Part Status | Active |
| Base Product Number | STD18 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 100 V |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概要
Description
The device is encapsulated in a TO-220 package, which provides efficient thermal dissipation, enabling it to handle high-power applications effectively. Its design includes advanced features that reduce losses and improve efficiency, such as the optimized gate charge and reduced gate-to-drain charge. This MOSFET is particularly suited for hard-switching topologies and resonant topologies in both industrial and consumer electronics due to its robustness and reliability.
Overall, the STD18N65M5 combines high performance with ease of integration, making it a versatile component for power management in various electronic applications.
Equivalent
Features
1. N-Channel MOSFET: It operates as an N-channel enhancement-mode MOSFET.
2. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 18A, making it suitable for high-voltage applications.
3. RDS(on): It provides a low on-resistance, minimizing power loss and improving efficiency.
4. High-Speed Switching: The device supports fast switching speeds, which is critical for high-frequency applications.
5. Low Gate Charge: It features a low gate charge (Q_g), which reduces the power needed to drive the MOSFET, improving overall efficiency.
6. Robust Design: Designed to handle high power levels, it is reliable in harsh environments.
7. Applications: Ideal for use in switching power supplies, motor control, lighting systems, and other high-power applications.
This combination of features makes the STD18N65M5 a versatile and efficient choice for various power management applications.
Pinout
1. Pin Count:
- The STD18N65M5 has 3 main pins plus the tab:
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
- Tab: Drain (connected to the same point as Pin 2 internally)
2. Function:
- Gate (G): This pin is used to control the ON/OFF state of the MOSFET. Applying a voltage above a certain threshold will turn the MOSFET on, allowing current to flow between the drain and source.
- Drain (D): Current flows from the drain to the source when the MOSFET is turned on.
- Source (S): Acts as the return path for the current flowing through the device.
This MOSFET is commonly used in applications such as power supplies, motor drives, and other high-efficiency power conversion systems.
Manufacturer
Application
1. Switching Power Supplies: Used in AC-DC and DC-DC converters for efficient energy conversion.
2. Motor Drives: Suitable for driving motors in industrial and consumer applications.
3. Lighting Systems: Employed in LED drivers and other lighting applications for power regulation.
4. Inverters: Used in solar inverters and uninterruptible power supplies (UPS) for energy management.
5. Audio Amplifiers: Utilized in Class D amplifiers due to fast switching capabilities.
Its high-speed performance and robustness make it ideal for these and other high-performance electronic applications.