画像は参考用です
STD7N60M2
+BOMMOSFET N-CH 600V 5A DPAK
-
メーカーRFE/フューゼテック
-
メーカー品番 #STD7N60M2
-
データシート STD7N60M2 DataSheet
-
在庫状況3507
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | MDmesh™ II Plus |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 5A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 950mOhm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.8 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 271 pF @ 100 V |
| PowerDissipation(Max) | 60W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| BaseProductNumber | STD7N60 |
概要
Description
The STD7N60M2 is a high-voltage N-channel MOSFET designed for various power applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 7A, making it suitable for switching and amplification tasks in power supplies, converters, and motor control circuits.
Key specifications include a low on-resistance (Rds(on)) of around 0.7 ohms, which enhances efficiency by minimizing power loss during operation. The device also has a fast switching speed, allowing for effective performance in high-frequency applications.
The STD7N60M2 is housed in a TO-220 package, facilitating easy heat dissipation and mounting. It is often used in applications like industrial automation, renewable energy systems, and automotive electronics. Proper thermal management is essential to ensure reliable operation, particularly at high voltages.
Overall, the STD7N60M2 is a versatile and efficient component for engineers looking to design robust power electronic systems.
Key specifications include a low on-resistance (Rds(on)) of around 0.7 ohms, which enhances efficiency by minimizing power loss during operation. The device also has a fast switching speed, allowing for effective performance in high-frequency applications.
The STD7N60M2 is housed in a TO-220 package, facilitating easy heat dissipation and mounting. It is often used in applications like industrial automation, renewable energy systems, and automotive electronics. Proper thermal management is essential to ensure reliable operation, particularly at high voltages.
Overall, the STD7N60M2 is a versatile and efficient component for engineers looking to design robust power electronic systems.
Equivalent
The STD7N60M2 is a 600V N-channel MOSFET. Equivalent products include the STP7NK60Z, IRF840, FQP7N60, and MTP7N60E. Always verify specifications such as Rds(on), gate threshold voltage, and package type before substitution.
Features
The STD7N60M2 is an N-channel MOSFET designed for high-voltage applications. Here are its key features:
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: The MOSFET can handle a continuous drain current (ID) of up to 7A at 25°C.
3. On-Resistance (RDS(on)): It has a low on-resistance of approximately 0.7 ohms, which reduces power loss during operation.
4. Gate Threshold Voltage (VGS(th)): The gate threshold voltage ranges from 2V to 4V, allowing for efficient switching.
5. Fast Switching Speed: Its design ensures quick turn-on and turn-off times, enhancing switching efficiency.
6. Thermal Resistance: It features a thermal resistance of 62°C/W, allowing for effective heat dissipation.
7. Applications: Suitable for power supplies, motor drives, and other high-voltage switching applications.
Overall, the STD7N60M2 combines high efficiency with robust performance, making it ideal for various electronic applications.
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: The MOSFET can handle a continuous drain current (ID) of up to 7A at 25°C.
3. On-Resistance (RDS(on)): It has a low on-resistance of approximately 0.7 ohms, which reduces power loss during operation.
4. Gate Threshold Voltage (VGS(th)): The gate threshold voltage ranges from 2V to 4V, allowing for efficient switching.
5. Fast Switching Speed: Its design ensures quick turn-on and turn-off times, enhancing switching efficiency.
6. Thermal Resistance: It features a thermal resistance of 62°C/W, allowing for effective heat dissipation.
7. Applications: Suitable for power supplies, motor drives, and other high-voltage switching applications.
Overall, the STD7N60M2 combines high efficiency with robust performance, making it ideal for various electronic applications.
Pinout
The STD7N60M2 is an N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here turns the MOSFET on or off, allowing current to flow between the drain and source.
2. Drain (D): This is the terminal where the current flows into the MOSFET when it is turned on. It connects to the load in the circuit.
3. Source (S): This pin is the terminal where the current exits the MOSFET. In an N-channel MOSFET, it is typically connected to ground or a lower voltage reference.
The STD7N60M2 is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 7A, making it suitable for high-voltage applications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here turns the MOSFET on or off, allowing current to flow between the drain and source.
2. Drain (D): This is the terminal where the current flows into the MOSFET when it is turned on. It connects to the load in the circuit.
3. Source (S): This pin is the terminal where the current exits the MOSFET. In an N-channel MOSFET, it is typically connected to ground or a lower voltage reference.
The STD7N60M2 is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 7A, making it suitable for high-voltage applications.
Manufacturer
The STD7N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products used in various applications, including automotive, industrial, personal electronics, and communication systems.
Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and has a strong presence in the Asia-Pacific, Europe, and the Americas. The company is recognized for its commitment to innovation and sustainability, offering products that include microcontrollers, sensors, power management devices, and discrete components like MOSFETs, including the STD7N60M2, which is a N-channel MOSFET used in power applications.
STMicroelectronics operates in a highly competitive industry, focusing on advanced technology development and manufacturing processes to meet diverse customer needs. The company is also involved in various partnerships and collaborations to drive technological advancements and enhance its product offerings.
Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and has a strong presence in the Asia-Pacific, Europe, and the Americas. The company is recognized for its commitment to innovation and sustainability, offering products that include microcontrollers, sensors, power management devices, and discrete components like MOSFETs, including the STD7N60M2, which is a N-channel MOSFET used in power applications.
STMicroelectronics operates in a highly competitive industry, focusing on advanced technology development and manufacturing processes to meet diverse customer needs. The company is also involved in various partnerships and collaborations to drive technological advancements and enhance its product offerings.
Application
The STD7N60M2 is an N-channel MOSFET commonly used in various applications, including:
1. Switching Power Supplies: Efficiently switches power in converters and regulators.
2. Motor Control: Drives motors in industrial and consumer applications.
3. LED Drivers: Controls current for LED lighting systems.
4. Audio Amplifiers: Used in amplifier circuits for high power handling.
5. DC-DC Converters: Facilitates efficient voltage conversion.
6. Inverters: Converts DC to AC in renewable energy systems.
7. High-Voltage Applications: Suitable for devices requiring high voltage and current ratings.
Its features include low on-resistance and high-speed switching, making it versatile in power management applications.
1. Switching Power Supplies: Efficiently switches power in converters and regulators.
2. Motor Control: Drives motors in industrial and consumer applications.
3. LED Drivers: Controls current for LED lighting systems.
4. Audio Amplifiers: Used in amplifier circuits for high power handling.
5. DC-DC Converters: Facilitates efficient voltage conversion.
6. Inverters: Converts DC to AC in renewable energy systems.
7. High-Voltage Applications: Suitable for devices requiring high voltage and current ratings.
Its features include low on-resistance and high-speed switching, making it versatile in power management applications.
Package
The STD7N60M2 is typically available in a TO-220 package type. This package is designed for high power applications, providing good thermal performance and ease of mounting to heatsinks.
