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STD7NM60N
+BOMMOSFET N-CH 600V 5A DPAK
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メーカーRFE/フューゼテック
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メーカー品番 #STD7NM60N
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データシート STD7NM60N DataSheet
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パッケージ TO-252-3
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在庫状況6890
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 900mOhm @ 2.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 14 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 363 pF @ 50 V |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
概要
Description
"Introduction to STD7NM60N" likely refers to an overview of the STD7NM60N, a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by STMicroelectronics. This device is commonly used in electronic circuits for switching and amplifying electronic signals. Key features of the STD7NM60N include a 600V drain-source breakdown voltage, a continuous drain current of around 6.5A, and a low on-resistance, which makes it efficient for power applications. It typically comes in a DPAK package, aiding in heat dissipation. This MOSFET is suitable for applications like power supplies, lighting, and motor control, where high efficiency and reliability are crucial. Its design allows for fast switching and minimal energy loss, making it a popular choice in various industrial and consumer electronics. The STD7NM60N's robustness and performance are enhanced by its advanced silicon technology, providing a reliable solution for a wide range of electronic applications.
Equivalent
The STD7NM60N is an N-channel MOSFET. Equivalent products include:
1. IRF840 - N-channel MOSFET with similar specs.
2. STP7NK60Z - Another option from STMicroelectronics.
3. NTMFS5C612NL - A comparable option by ON Semiconductor.
4. FDPF7N60NZ - Fairchild/ON Semiconductor's similar MOSFET.
5. FQA8N60C - Fairchild's equivalent with close characteristics.
Always verify the datasheets for precise matching of specs.
1. IRF840 - N-channel MOSFET with similar specs.
2. STP7NK60Z - Another option from STMicroelectronics.
3. NTMFS5C612NL - A comparable option by ON Semiconductor.
4. FDPF7N60NZ - Fairchild/ON Semiconductor's similar MOSFET.
5. FQA8N60C - Fairchild's equivalent with close characteristics.
Always verify the datasheets for precise matching of specs.
Features
The STD7NM60N is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its robust performance in various electronic applications. Here are its key features:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 6.5A.
2. R_DS(on) Resistance: It has a low on-state resistance, typically around 1.2 ohms, which helps reduce power loss and increase efficiency.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 2V and 4V, ensuring compatibility with various driving circuits.
4. Fast Switching: The MOSFET exhibits fast switching speeds, making it suitable for high-frequency applications.
5. Package Type: It is commonly available in a TO-220 package, which facilitates easy mounting and heat dissipation.
6. Applications: Ideal for use in power supplies, converters, motor control, and other high-voltage applications.
7. Enhanced Ruggedness: Offers robust performance against high voltage transients and is designed to withstand harsh electrical environments.
These features make the STD7NM60N a versatile component for efficient energy management in electronic circuits.
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 6.5A.
2. R_DS(on) Resistance: It has a low on-state resistance, typically around 1.2 ohms, which helps reduce power loss and increase efficiency.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 2V and 4V, ensuring compatibility with various driving circuits.
4. Fast Switching: The MOSFET exhibits fast switching speeds, making it suitable for high-frequency applications.
5. Package Type: It is commonly available in a TO-220 package, which facilitates easy mounting and heat dissipation.
6. Applications: Ideal for use in power supplies, converters, motor control, and other high-voltage applications.
7. Enhanced Ruggedness: Offers robust performance against high voltage transients and is designed to withstand harsh electrical environments.
These features make the STD7NM60N a versatile component for efficient energy management in electronic circuits.
Pinout
The STD7NM60N is an N-channel MOSFET commonly used for switching applications. It typically comes in a DPAK package. The device has three main pins:
1. Gate (G): This pin is used to control the conductivity between the drain and source. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the input terminal for the current. Current flows from this pin when the MOSFET is in the 'on' state.
3. Source (S): This is the output terminal for the current. Current exits the MOSFET through the source pin when it is conducting.
Additionally, the MOSFET package often includes a fourth pin, which is a connection to the substrate or metal tab (often referred to as the "back" or "tab"), primarily for heat dissipation purposes. It's usually connected to the source pin internally.
The STD7NM60N is designed for high-voltage applications, with a drain-source voltage (V_DS) rating of 600V and a continuous drain current (I_D) of up to 7A, making it suitable for use in power supply, motor control, and other high-voltage switching applications.
1. Gate (G): This pin is used to control the conductivity between the drain and source. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the input terminal for the current. Current flows from this pin when the MOSFET is in the 'on' state.
3. Source (S): This is the output terminal for the current. Current exits the MOSFET through the source pin when it is conducting.
Additionally, the MOSFET package often includes a fourth pin, which is a connection to the substrate or metal tab (often referred to as the "back" or "tab"), primarily for heat dissipation purposes. It's usually connected to the source pin internally.
The STD7NM60N is designed for high-voltage applications, with a drain-source voltage (V_DS) rating of 600V and a continuous drain current (I_D) of up to 7A, making it suitable for use in power supply, motor control, and other high-voltage switching applications.
Manufacturer
The STD7NM60N is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products. These products are used in a variety of applications across different industries, including automotive, industrial, personal electronics, and communications equipment. The company is known for its innovation and technology in producing integrated devices and discrete components, catering to both analog and digital applications. STMicroelectronics is headquartered in Geneva, Switzerland, and is recognized as one of the leading players in the semiconductor industry.
Application
The STD7NM60N is an N-channel MOSFET commonly used in various applications due to its efficiency and robust performance. Key application areas include:
1. Power Supply Units: Used for switching and regulation in AC-DC and DC-DC converters.
2. Motor Control: Integral in driving motors, offering precise control in industrial and automotive systems.
3. Lighting Systems: Employed in LED drivers and other lighting control systems for efficient power management.
4. Battery Management: Used in battery protection circuits and charging systems for portable electronics.
5. Inverter Circuits: Plays a critical role in inverters for renewable energy systems, like solar panels.
These applications leverage the MOSFET's ability to handle high voltage and current with minimal power loss.
1. Power Supply Units: Used for switching and regulation in AC-DC and DC-DC converters.
2. Motor Control: Integral in driving motors, offering precise control in industrial and automotive systems.
3. Lighting Systems: Employed in LED drivers and other lighting control systems for efficient power management.
4. Battery Management: Used in battery protection circuits and charging systems for portable electronics.
5. Inverter Circuits: Plays a critical role in inverters for renewable energy systems, like solar panels.
These applications leverage the MOSFET's ability to handle high voltage and current with minimal power loss.
Package
The STD7NM60N is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically packaged in a TO-252 (DPAK) surface-mount type. This package is designed for efficient heat dissipation and is commonly used in power management applications.
