画像は参考用です
STF33N60M2
+BOMMOSFET N-CH 600V 26A TO220FP
-
メーカーRFE/フューゼテック
-
メーカー品番 #STF33N60M2
-
在庫状況6730
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | MDmesh™ II Plus |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 26A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 125mOhm @ 13A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 45.5 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1781 pF @ 100 V |
| PowerDissipation(Max) | 35W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
| Package/Case | TO-220-3 Full Pack |
| BaseProductNumber | STF33 |
概要
Description
The STF33N60M2 is a high-performance N-channel MOSFET designed for power applications. It features a voltage rating of 600V and a maximum continuous drain current of 33A, making it suitable for demanding environments. The device is known for its low on-resistance (R_DS(on)), which enhances efficiency by reducing power losses during operation.
Its fast switching capabilities allow for efficient energy management in various applications, including power supplies, motor controls, and inverters. The STF33N60M2 also includes a low gate charge, which contributes to reduced driving power and faster switching times.
Packaged in a TO-220 form factor, it offers good thermal performance, allowing for effective heat dissipation. This MOSFET is ideal for applications requiring high-voltage and high-current handling, making it a reliable choice for designers seeking efficiency and performance in their circuits.
Its fast switching capabilities allow for efficient energy management in various applications, including power supplies, motor controls, and inverters. The STF33N60M2 also includes a low gate charge, which contributes to reduced driving power and faster switching times.
Packaged in a TO-220 form factor, it offers good thermal performance, allowing for effective heat dissipation. This MOSFET is ideal for applications requiring high-voltage and high-current handling, making it a reliable choice for designers seeking efficiency and performance in their circuits.
Equivalent
The STF33N60M2 is an N-channel MOSFET with a voltage rating of 600V and a current rating of 33A. Equivalent products include the STP33N60M2, IRF840, and FQP33N60L. Always check specific parameters like R_DS(on) and gate charge to ensure compatibility for your application.
Features
The STF33N60M2 is a high-voltage N-channel MOSFET designed for efficient power management applications. Key features include:
- Voltage Rating: 600V, suitable for high-voltage applications.
- Current Rating: Can handle continuous drain current up to 33A, enabling robust performance in various circuits.
- RDS(on): Low on-resistance of about 0.15Ω, which enhances efficiency by reducing conduction losses.
- Gate Threshold Voltage: Typically between 2V and 4V, allowing for ease of drive with standard logic levels.
- High-Speed Switching: Offers fast switching capabilities, making it ideal for switching power supplies and inverters.
- Package Type: Available in TO-220 package for effective heat dissipation.
- Temperature Range: Operates effectively in a wide temperature range, enhancing reliability in different environments.
These features make the STF33N60M2 suitable for applications in power supplies, motor control, and other high-voltage circuits.
- Voltage Rating: 600V, suitable for high-voltage applications.
- Current Rating: Can handle continuous drain current up to 33A, enabling robust performance in various circuits.
- RDS(on): Low on-resistance of about 0.15Ω, which enhances efficiency by reducing conduction losses.
- Gate Threshold Voltage: Typically between 2V and 4V, allowing for ease of drive with standard logic levels.
- High-Speed Switching: Offers fast switching capabilities, making it ideal for switching power supplies and inverters.
- Package Type: Available in TO-220 package for effective heat dissipation.
- Temperature Range: Operates effectively in a wide temperature range, enhancing reliability in different environments.
These features make the STF33N60M2 suitable for applications in power supplies, motor control, and other high-voltage circuits.
Pinout
The STF33N60M2 is a N-channel MOSFET with a pin count of 3. Its main functions include switching and amplifying electrical signals in various applications, such as power supplies and motor control. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here turns the device on.
2. Drain (D) - This pin connects to the load and allows current to flow from the drain to the source when the device is turned on.
3. Source (S) - This pin connects to ground or the negative side of the power supply, completing the circuit for current flow.
The STF33N60M2 is designed for high voltage applications, rated for a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 33A.
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here turns the device on.
2. Drain (D) - This pin connects to the load and allows current to flow from the drain to the source when the device is turned on.
3. Source (S) - This pin connects to ground or the negative side of the power supply, completing the circuit for current flow.
The STF33N60M2 is designed for high voltage applications, rated for a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 33A.
Manufacturer
The STF33N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor devices and solutions for various applications, including automotive, industrial, consumer electronics, and telecommunications. The company is known for its innovation in power management, analog, and digital solutions, as well as microcontrollers and sensors. Headquartered in Geneva, Switzerland, STMicroelectronics operates in over 35 countries and is a significant player in the global semiconductor market. The STF33N60M2 itself is a N-channel MOSFET known for its high voltage and current capabilities, making it suitable for power applications in various electronic devices.
Application
The STF33N60M2 is a power MOSFET primarily used in various applications, including:
1. Switching Power Supplies: For efficient power conversion in DC-DC converters.
2. Motor Drives: For controlling motors in industrial automation and electric vehicles.
3. LED Drivers: To manage high-current LED lighting systems.
4. Inverters: In renewable energy systems like solar inverters.
5. Audio Amplifiers: In high-fidelity audio applications for signal amplification.
6. Power Tools: In battery-operated devices for efficient power management.
Its high voltage rating and low on-resistance make it suitable for demanding applications.
1. Switching Power Supplies: For efficient power conversion in DC-DC converters.
2. Motor Drives: For controlling motors in industrial automation and electric vehicles.
3. LED Drivers: To manage high-current LED lighting systems.
4. Inverters: In renewable energy systems like solar inverters.
5. Audio Amplifiers: In high-fidelity audio applications for signal amplification.
6. Power Tools: In battery-operated devices for efficient power management.
Its high voltage rating and low on-resistance make it suitable for demanding applications.
Package
The STF33N60M2 is packaged in a TO-220 housing. This type of package is commonly used for power MOSFETs, offering efficient heat dissipation and ease of mounting on heatsinks for improved thermal management.
