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STGW30NC60KD
+BOMIGBT 600V 60A TO-247-3
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メーカーRFE/フューゼテック
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メーカー品番 #STGW30NC60KD
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データシート STGW30NC60KD DataSheet
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在庫状況17922
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | PowerMESH™ |
| Part Status | Active |
| Base Product Number | STGW30 |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 125 A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Power - Max | 200 W |
| Switching Energy | 350µJ (on), 435µJ (off) |
| Input Type | Standard |
| Gate Charge | 96 nC |
| Td (on/off) @ 25°C | 29ns/120ns |
| Test Condition | 480V, 20A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 40 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Packaging | Tube |
概要
Description
Key specifications include a collector-emitter voltage (V_CES) of 600V and a continuous collector current (I_C) of 30A, making it suitable for medium to high-power applications. The device also features a low on-state voltage drop, ensuring reduced power losses and improved overall system efficiency. Additionally, it is designed with a fast switching speed and a short-circuit withstand capability, enhancing its reliability and robustness in demanding environments.
The STGW30NC60KD is available in a TO-247 package, providing efficient heat dissipation through its large mounting surface, which is crucial for maintaining performance under high-power conditions.
Equivalent
Features
1. IGBT Technology: This component is an Insulated Gate Bipolar Transistor (IGBT), combining the easy drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.
2. Voltage and Current Ratings: It is designed to handle a collector-emitter voltage (V_ce) of up to 600V and a continuous collector current (I_c) of 60A.
3. Low Saturation Voltage: The transistor offers low on-state voltage drop, which enhances efficiency by reducing the power loss during conduction.
4. Switching Speed: It provides fast switching capabilities, making it suitable for high-frequency applications.
5. Package: The STGW30NC60KD is commonly available in a TO-247 package, providing robust durability and effective heat dissipation.
6. Applications: It is typically used in applications such as motor drives, power inverters, and other high-power industrial applications.
These features make the STGW30NC60KD a versatile choice for efficient power management in demanding environments.
Pinout
1. Collector (C): This is the terminal through which the main current enters the IGBT from the connected external circuit. It is responsible for collecting the charge carriers.
2. Gate (G): This is the control terminal used to turn the IGBT on or off. A voltage applied to the gate controls the conductivity of the device.
3. Emitter (E): This is the terminal through which the current exits the IGBT. It serves as the reference point for the gate voltage.
The STGW30NC60KD is designed to handle high voltages and currents, making it suitable for applications like motor drives, power supplies, and inverters.
Manufacturer
Application
1. Motor Drives: Used in controlling electric motors in industrial and consumer applications.
2. Power Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
3. Switching Power Supplies: Helps in efficient power management and conversion.
4. Welding Equipment: Used in high-frequency welding applications due to its robustness.
5. Lighting Systems: Employed in electronic ballasts for fluorescent and HID lamps.
These applications benefit from the IGBT's ability to handle high voltages and currents while maintaining energy efficiency.