STH315N10F7-2

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STH315N10F7-2

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MOSFET N-CH 100V 180A H2PAK-2

  • メーカーRFE/フューゼテック

  • メーカー品番 #STH315N10F7-2

  • データシート STH315N10F7-2 DataSheet

  • 在庫状況1381

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仕様

属性
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 180A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.3mOhm @ 60A, 10V
Vgs(th)(Max)@Id 4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 180 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 12800 pF @ 25 V
PowerDissipation(Max) 315W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage H2Pak-2

概要

Description

The STH315N10F7-2 is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in electronic circuits. This N-channel MOSFET is part of the MasterGaN series, which is known for high efficiency and performance in power management applications. The "315" generally refers to the model number, while "N10F7" indicates specific technical characteristics such as voltage and current ratings.
The key features of the STH315N10F7-2 typically include a low on-resistance, which reduces power loss, and high-speed switching capability, making it ideal for high-frequency applications. It can handle significant power levels while maintaining reliability and stability. This MOSFET is commonly used in automotive, industrial, and consumer electronics for applications such as power supplies, motor drivers, and inverter circuits.
Its compact design and robust performance make it suitable for environments that require both power density and thermal efficiency. The "2" in the model might refer to packaging or a version iteration, but this can vary by manufacturer.

Equivalent

The STH315N10F7-2 is a power MOSFET. Equivalent products can include similar power MOSFETs from other manufacturers with comparable voltage and current ratings, on-resistance, and packaging. Candidates include the IRFP3206 from Infineon, the FDP047AN08A0 from ON Semiconductor, and the AOTF10B60 from Alpha & Omega Semiconductor. It is crucial to verify the specifications and performance characteristics in detail to ensure compatibility for your specific application.

Features

The STH315N10F7-2 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from STMicroelectronics, designed for high-efficiency power switching applications. Here are its key features:
1. N-channel MOSFET: Facilitates efficient electron flow, suitable for high-speed switching.
2. Low On-Resistance: Offers low conduction losses, improving efficiency.
3. High Current Capability: Can handle high currents, making it ideal for power applications.
4. Voltage Rating: Typically offers a high voltage rating, suitable for various applications.
5. Fast Switching: Enables quick transitions between on and off states, important for high-frequency applications.
6. Enhanced Ruggedness: Designed to withstand high stress and harsh conditions.
7. Applications: Commonly used in power management, motor control, and conversion systems.
These features make the STH315N10F7-2 particularly effective in applications requiring reliable and efficient power handling and switching capabilities. Always refer to the manufacturer's datasheet for specific electrical characteristics and ratings.

Pinout

The STH315N10F7-2 is an N-channel MOSFET manufactured by STMicroelectronics. It typically comes in a TO-220 package, which features three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off. It effectively controls the flow of current between the drain and source.
2. Drain (D): This pin is where the current flows out when the MOSFET is in the 'on' state. It is connected to the load in most applications.
3. Source (S): This is the pin through which current enters the MOSFET. It is typically connected to ground in N-channel configurations.
The STH315N10F7-2 is used for various purposes, including switching and amplification in power management applications, offering high efficiency due to its low on-state resistance and fast switching capabilities.

Manufacturer

The STH315N10F7-2 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. It serves various sectors, including automotive, industrial, personal electronics, and communications equipment. The company is known for its innovation in semiconductor technologies and plays a crucial role in enabling smart driving, smart industry, and smart home solutions. It operates worldwide and is headquartered in Geneva, Switzerland.

Application

The STH315N10F7-2 is a Power MOSFET, often used in various high-power and high-efficiency applications. Its application areas include:
1. Automotive: Used in powertrain systems, electric and hybrid vehicles for efficient power management.
2. Industrial: Employed in motor drives, inverters, and power supplies due to its ability to handle high currents.
3. Consumer Electronics: Utilized in power adapters and battery charging circuits for improved efficiency.
4. Telecommunications: Provides power regulation and management in networking and communication devices.
5. Renewable Energy: Applied in solar inverters and other renewable energy systems to enhance energy conversion efficiency.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.

Package

The STH315N10F7-2 is a power MOSFET transistor that comes in a H²PAK-2 package. This package type is designed to enhance thermal performance and is commonly used in automotive and industrial applications.

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