STN3P6F6

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STN3P6F6

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MOSFET P-CH 60V SOT223

  • メーカーRFE/フューゼテック

  • メーカー品番 #STN3P6F6

  • データシート STN3P6F6 DataSheet

  • パッケージ SOT-223

  • 在庫状況3276

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仕様

属性
Package Tape & Reel (TR),Cut Tape (CT)
Series DeepGATE™, STripFET™ VI
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 3A (Tj)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 160mOhm @ 1.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 6.4 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 340 pF @ 48 V
PowerDissipation(Max) 2.6W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223

概要

Equivalent

The STN3P6F6 is a P-channel MOSFET. Equivalent alternatives include:
- STP3P6F6 (similar specs, same series)
- IRLML6401 (Infineon, comparable ratings)
- SI2301 (Vishay, P-channel alternative)
- DMG2305UX (Diodes Inc., SOT-23 package)
Check voltage (30V), current (-3.6A), and package (SOT-23) for compatibility. Always verify datasheets for exact replacements.

Features

The STN3P6F6 is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V (Drain-Source, VDSS)
- Current Rating: 6A (Continuous Drain, ID)
- Low On-Resistance: 36mΩ (max at VGS = 10V)
- Gate Threshold Voltage: 1.0V (min) to 2.5V (max)
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 2.5W (TC = 25°C)
- Package: SOT-23-6 (Compact, surface-mount)
- Applications: Power management, load switching, DC-DC converters, and battery protection.
It offers high efficiency and reliability in low-voltage, high-current applications.

Pinout

The STN3P6F6 is a P-channel MOSFET with the following key specifications:
- Pin Count: 3 (Source, Gate, Drain)
- Package: SOT-23 (small surface-mount)
- Function: Power switching in low-voltage applications (e.g., load switches, battery management).
- Key Parameters:
- VDS: -30V (drain-source voltage)
- ID: -5.6A (continuous drain current)
- Low RDS(on): ~40mΩ (enhances efficiency).
Designed for compact, high-efficiency circuits, it is commonly used in portable electronics and power management systems.

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