仕様
| 属性 | 値 |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.5Ohm @ 1.5A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 22.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 575 pF @ 25 V |
| PowerDissipation(Max) | 80W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
概要
Description
The STP4NK80Z is an N-channel Power MOSFET from STMicroelectronics, designed for high-voltage, high-speed switching applications. Key features include:
- Voltage Rating: 800V drain-source voltage (VDSS).
- Current Handling: 4A continuous drain current (ID).
- Low On-Resistance: 1.8Ω (typical) for reduced conduction losses.
- Fast Switching: Optimized for efficiency in power supplies, lighting, and motor control.
- Package: TO-220, offering good thermal performance.
It is commonly used in SMPS (Switched-Mode Power Supplies), inverters, and industrial applications requiring robust performance. The built-in fast-recovery diode enhances reliability in inductive load scenarios.
For detailed specs, refer to the datasheet.
- Voltage Rating: 800V drain-source voltage (VDSS).
- Current Handling: 4A continuous drain current (ID).
- Low On-Resistance: 1.8Ω (typical) for reduced conduction losses.
- Fast Switching: Optimized for efficiency in power supplies, lighting, and motor control.
- Package: TO-220, offering good thermal performance.
It is commonly used in SMPS (Switched-Mode Power Supplies), inverters, and industrial applications requiring robust performance. The built-in fast-recovery diode enhances reliability in inductive load scenarios.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the STP4NK80Z (800V, 4A MOSFET) include:
- IRF840 (500V, 8A) – Lower voltage but common replacement.
- STP4NK80ZFP – Same specs, TO-220FP package.
- FQPF4N80 (800V, 4A) – Fairchild alternative.
- 2SK3562 (800V, 4A) – Toshiba equivalent.
- IXFH4N80 (800V, 4A) – IXYS alternative.
Check datasheets for exact compatibility in your circuit.
- IRF840 (500V, 8A) – Lower voltage but common replacement.
- STP4NK80ZFP – Same specs, TO-220FP package.
- FQPF4N80 (800V, 4A) – Fairchild alternative.
- 2SK3562 (800V, 4A) – Toshiba equivalent.
- IXFH4N80 (800V, 4A) – IXYS alternative.
Check datasheets for exact compatibility in your circuit.
Features
The STP4NK80Z is an N-channel MOSFET with the following key features:
- Voltage Rating: 800V drain-source voltage (VDSS), suitable for high-voltage applications.
- Current Rating: 4A continuous drain current (ID).
- Low On-Resistance: 3Ω (max) at 10V gate drive (RDS(on)), reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Avalanche Rugged: Enhanced energy capability for reliability in harsh conditions.
- Low Gate Charge (Qg): Improves efficiency in high-frequency circuits.
- Package: TO-220, providing good thermal performance.
Ideal for SMPS, lighting, and industrial power systems.
- Voltage Rating: 800V drain-source voltage (VDSS), suitable for high-voltage applications.
- Current Rating: 4A continuous drain current (ID).
- Low On-Resistance: 3Ω (max) at 10V gate drive (RDS(on)), reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Avalanche Rugged: Enhanced energy capability for reliability in harsh conditions.
- Low Gate Charge (Qg): Improves efficiency in high-frequency circuits.
- Package: TO-220, providing good thermal performance.
Ideal for SMPS, lighting, and industrial power systems.
Pinout
The STP4NK80Z is a N-channel MOSFET with the following key specifications:
- Pin Count: 3 (TO-220 package: Gate, Drain, Source)
- Function: Power switching in high-voltage applications
- Voltage Rating: 800V
- Current Rating: 4A (continuous)
- RDS(on): 1.5Ω (max) at 10V VGS
- Applications: SMPS, lighting, motor control
It is designed for efficiency in high-voltage circuits.
- Pin Count: 3 (TO-220 package: Gate, Drain, Source)
- Function: Power switching in high-voltage applications
- Voltage Rating: 800V
- Current Rating: 4A (continuous)
- RDS(on): 1.5Ω (max) at 10V VGS
- Applications: SMPS, lighting, motor control
It is designed for efficiency in high-voltage circuits.
Package
The STP4NK80Z is a N-channel MOSFET in a TO-220 package. This through-hole package is commonly used for power applications due to its good thermal performance and ease of mounting on heat sinks. It features three pins: gate, drain, and source, suitable for high-voltage switching. The TO-220 package is robust and widely used in power supplies and motor control circuits.
