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STW12NK90Z
+BOMMOSFET N-CH 900V 11A TO247-3
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メーカーRFE/フューゼテック
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メーカー品番 #STW12NK90Z
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データシート STW12NK90Z DataSheet
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パッケージ TO-247
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在庫状況7449
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tube |
| Series | SuperMESH™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain(Id) @ 25°C | 11A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 880mOhm @ 5.5A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 152 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 3500 pF @ 25 V |
| Power Dissipation (Max) | 230W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
概要
Description
Key features of the STW12NK90Z include:
- Voltage Rating: It can handle a drain-source voltage of up to 900 V, making it suitable for high-voltage applications.
- Current Rating: The device can carry a continuous drain current of approximately 12 A under specified conditions.
- RDS(on): It offers low on-state resistance, which minimizes power loss during operation.
- Package: It is commonly available in a TO-247 package, which provides good thermal performance and ease of mounting.
This MOSFET is widely used in industrial and consumer electronics where efficient power management is crucial. Its design ensures robust performance and reliability, making it a preferred choice for engineers working on demanding electronic systems.
Equivalent
1. Infineon IPB90R1K2C3 - A 950V N-channel MOSFET.
2. Fairchild FQA11N90 - A 900V N-channel MOSFET.
3. Vishay IRFP460 - A 500V/20A N-channel MOSFET.
4. ON Semiconductor FDPF12N50FT - A 500V N-channel MOSFET.
Always verify electrical specifications and thermal characteristics to ensure compatibility.
Features
1. VDS (Drain-Source Voltage): It can handle up to 900V, making it suitable for high-voltage circuits.
2. RDS(on) (On-Resistance): It has a low on-resistance of about 0.85 ohms, which improves efficiency by reducing power loss during operation.
3. ID (Continuous Drain Current): It can support a continuous drain current of up to 12A, enabling it to manage substantial electrical loads.
4. QG (Total Gate Charge): With a total gate charge of around 70nC, it offers a balance between switching speed and drive requirements.
5. Package: Offered in a TO-247 package, which provides effective heat dissipation for power applications.
6. Applications: Suitable for use in switching power supplies, high-voltage converters, and general-purpose power management.
7. Temperature Range: Operates efficiently within a wide temperature range, enhancing reliability under varying environmental conditions.
These features make the STW12NK90Z a reliable choice for demanding high-voltage power electronics applications.
Pinout
1. Gate (G): The gate pin is used to control the MOSFET. By applying a voltage to this pin, you can turn the MOSFET on or off, which allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is in the "on" state. It is connected to the positive side of the load that the MOSFET is driving.
3. Source (S): The source pin is where the current exits the MOSFET. It is usually connected to the ground or lower potential voltage in the circuit.
The STW12NK90Z is designed for high-voltage applications, with a breakdown voltage rating of 900V and a continuous drain current of 12A, making it suitable for power switching and amplification tasks.
Manufacturer
Application
1. Power Supply Units: Used in switched-mode power supplies (SMPS) for efficient energy conversion.
2. Lighting: Employed in electronic ballasts for fluorescent and LED lighting.
3. Industrial Equipment: Used in motor control systems and industrial inverters.
4. Telecommunications: Provides power management in telecom infrastructures.
5. Consumer Electronics: Found in power adapters and chargers for devices.
6. Renewable Energy Systems: Used in photovoltaic inverters and wind energy systems.
Its robustness, high-speed switching, and low on-resistance make it ideal for these demanding applications.