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TPC112S4-TR
+BOM12 BIT DIGITAL TO ANALOG CONVERT
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メーカー3ピーク
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メーカー品番 #TPC112S4-TR
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データシート TPC112S4-TR DataSheet
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在庫状況3724
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| Number of Bits | 12 |
| Number of D / A Converters | 4 |
| Settling Time | 14µs |
| Output Type | Voltage - Buffered |
| Differential Output | No |
| Data Interface | Microwire, QSPI, Serial, SPI |
| Reference Type | External |
| Voltage - Supply, Analog | 2.7V ~ 5.5V |
| Voltage - Supply, Digital | 2.7V ~ 5.5V |
| INL / DNL (LSB) | ±0.25, ±0.0 |
| Architecture | String DAC |
| Operating Temperature | -40°C ~ 125°C |
| Package / Case | 16-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 16-TSSOP |
| Mounting Type | Surface Mount |
概要
Description
The device features low on-resistance (RDS(on)), which minimizes conduction losses, enhancing overall efficiency. Its fast switching capabilities make it ideal for high-frequency applications, while the robust packaging ensures reliable thermal performance.
The TPC112S4-TR also supports a wide operating temperature range, making it versatile in different environmental conditions. Additionally, it comes in a compact package that facilitates easy integration into circuit designs.
Overall, TPC112S4-TR is an excellent choice for designers seeking a reliable and efficient MOSFET solution in modern power electronics.
Equivalent
Features
- Voltage Rating: Typically supports a high drain-source voltage (V_DS), allowing for robust operation in demanding conditions.
- Current Handling: Capable of handling significant continuous drain current (I_D), making it suitable for applications requiring high power.
- Low On-Resistance: Offers a low R_DS(on) value, which minimizes power losses and improves efficiency in switching applications.
- Fast Switching Speed: Optimized for fast operation, enhancing overall system performance.
- Thermal Performance: Designed with good thermal characteristics, enabling effective heat dissipation during operation.
- Package Type: Available in a compact package, facilitating easier integration into various circuit designs.
These features make the TPC112S4-TR ideal for power supplies, motor drivers, and other electronic applications where efficiency and reliability are critical.
Pinout
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connects to the drain of the first N-channel MOSFET.
3. Source 1 (S1) - Connects to the source of the first N-channel MOSFET.
4. Source 2 (S2) - Connects to the source of the second N-channel MOSFET.
5. Drain 2 (D2) - Connects to the drain of the second N-channel MOSFET.
6. Gate 2 (G2) - Controls the second N-channel MOSFET.
7. Drain Connection (D) - Common drain connection for both MOSFETs.
8. Source Connection (S) - Common source connection for both MOSFETs.
The TPC112S4-TR is used in various applications including power management and switching circuits, providing efficient performance for low-voltage applications.
Manufacturer
Founded in 1930, TI has evolved from a geophysical company to a leading innovator in the semiconductor field. The company is known for its commitment to research and development, producing high-quality components that enable efficient and advanced electronic systems. TI is also recognized for its contributions to education and the development of technology for better productivity and performance across numerous applications.