TPS2811DR

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TPS2811DR

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IC GATE DRVR LOW-SIDE 8SOIC

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仕様

属性
Part Status Active
DigiKey Programmable Not Verified
Driven Configuration Low-Side
Channel Type Synchronous
Number of Drivers 2
Gate Type MOSFET (N-Channel)
Voltage - Supply 4V ~ 14V
Logic Voltage - VIL, VIH 1V, 4V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Inverting
Rise / Fall Time (Typ) 14ns, 15ns
Operating Temperature -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number TPS2811

概要

Description

The TPS2811DR is a high-speed, dual-channel gate driver manufactured by Texas Instruments, designed for driving N-channel MOSFETs and IGBTs in various power applications. It features an integrated high-side and low-side driver in a compact package, making it suitable for half-bridge configurations.
Key specifications include a supply voltage range of 4.5V to 15V, peak output current capability of up to 2A, and propagation delays of less than 50ns, ensuring fast switching performance. The TPS2811DR incorporates features such as rail-to-rail output, integrated bootstrap capability for high-side driving, and under-voltage lockout protection, enhancing reliability and efficiency in power conversion systems.
Applications include motor drives, power inverters, and other high-frequency switching applications. With its robust design and ease of use, the TPS2811DR is ideal for engineers seeking to improve performance in power electronics designs.

Equivalent

The TPS2811DR is a high-speed, dual-channel gate driver. Equivalent products include:
1. LM5116 - Dual high and low side gate driver.
2. MIC4427 - Dual high-speed buffer/driver.
3. ISL6611A - Dual high-side and low-side gate driver.
4. TC4420 - Dual low-side MOSFET driver.
5. IRF740 - MOSFET driver, though not directly equivalent, can be used in similar applications.
Always check the specific requirements for voltage levels and drive current in your application.

Features

The TPS2811DR is a high-speed, dual-channel gate driver designed for driving N-channel MOSFETs in power applications. Key features include:
1. High-Speed Operation: Capable of driving MOSFETs with fast rise and fall times, enhancing efficiency in switch-mode power supplies and motor control applications.

2. Dual Output: Provides two independent outputs that can drive the high-side and low-side MOSFETs in a half-bridge configuration.
3. Voltage Range: Supports a wide power supply range (typically from 10V to 20V), making it versatile for various applications.
4. Logic Level Compatible: Accepts standard logic inputs, simplifying integration with microcontrollers and digital logic.
5. Bootstrap Capability: Features a bootstrap gate driver for high-side switching, enabling efficient operation in various configurations.
6. Integrated Protection: Includes under-voltage lockout (UVLO) for both the upper and lower drivers, ensuring reliable operation.
7. Thermal Performance: Designed with thermal considerations to handle high power dissipation.
Overall, the TPS2811DR is ideal for applications requiring efficient, high-speed switching control.

Pinout

The TPS2811DR is a dual high-speed MOSFET driver with a pin count of 8.
Pin Functions:
1. VDD (Pin 1): Supply voltage.
2. GND (Pin 2): Ground reference.
3. IN (Pin 3): Input signal for the first driver.
4. NOUT (Pin 4): Output for the first MOSFET driver.
5. INB (Pin 5): Input signal for the second driver (inverted).
6. NOUTB (Pin 6): Output for the second MOSFET driver.
7. CT (Pin 7): Capacitor connection for timing and stability.
8. COMP (Pin 8): Compensation pin for external components.
The TPS2811DR is designed to drive high-speed power MOSFETs in applications such as DC-DC converters, motor drives, and other switching applications. It provides fast rise and fall times, which enhance overall system efficiency.

Manufacturer

The TPS2811DR is manufactured by Texas Instruments (TI), a leading global semiconductor company. Founded in 1930, Texas Instruments is known for designing and producing analog and embedded processing chips used in various electronic devices. The company serves multiple markets, including automotive, industrial, communications, and consumer electronics. TI is recognized for its innovation, extensive product portfolio, and commitment to advancing technology. The TPS2811DR itself is a high-speed, dual-channel gate driver designed for driving MOSFETs and IGBTs in power management applications, contributing to efficient power conversion in various electronic systems.

Application

The TPS2811DR is a high-speed, dual-channel gate driver primarily used in power electronics applications. Its key application areas include:
1. Motor Drives: Enhancing efficiency in brushless DC and stepper motors.
2. Inverters: Driving IGBTs and MOSFETs in solar inverters and UPS systems.
3. Power Supplies: Supporting synchronous rectification in switch-mode power supplies.
4. Class D Audio Amplifiers: Driving output stages for improved audio performance.
5. Industrial Automation: Utilized in automation systems and robotics for precise control.
Its fast switching capability and high drive current make it suitable for demanding applications in these fields.

Package

The TPS2811DR is packaged in a 8-pin SOIC (Small Outline Integrated Circuit) package. This type of package is designed for surface mounting and offers a compact footprint suitable for various electronic applications.

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