仕様
| 属性 | 値 |
| Supplier | Toshiba Semiconductor and Storage |
| Package | Tube |
| ProductStatus | Obsolete |
| DiodeType | Silicon Carbide Schottky |
| Voltage-DCReverse(Vr)(Max) | 650 V |
| Current-AverageRectified(Io) | 8A (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| ReverseRecoveryTime(trr) | 0 ns |
| Current-ReverseLeakage@Vr | 90 µA @ 650 V |
| Capacitance@VrF | 44pF @ 650V, 1MHz |
| MountingType | Through Hole |
| Package/Case | TO-220-2 |
| SupplierDevicePackage | TO-220-2L |
