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UJ3C065030K3S
+BOMMOSFET N-CH 650V 85A TO247-3
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メーカーEPC
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メーカー品番 #UJ3C065030K3S
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在庫状況20876
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | UnitedSiC |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 85A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 12V |
| RdsOn(Max)@IdVgs | 35mOhm @ 50A, 12V |
| Vgs(th)(Max)@Id | 6V @ 10mA |
| GateCharge(Qg)(Max)@Vgs | 51 nC @ 15 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1500 pF @ 100 V |
| PowerDissipation(Max) | 441W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概要
Description
The term "UJ3C065030K3S" does not correspond to a widely recognized concept or item as of my last update in October 2023. It appears to be a specific model number or product code, possibly related to a component such as a semiconductor, electronic part, or industrial product. Products with similar naming conventions are often used in electronics or technology sectors, typically indicating specific characteristics like voltage, capacity, or configuration.
If "UJ3C065030K3S" is indeed a product code, additional context such as the manufacturer or industry would be necessary to provide a more detailed introduction. For precise information, you may want to consult technical datasheets, the manufacturer's website, or industry-specific resources where products with similar codes are detailed.
If "UJ3C065030K3S" is indeed a product code, additional context such as the manufacturer or industry would be necessary to provide a more detailed introduction. For precise information, you may want to consult technical datasheets, the manufacturer's website, or industry-specific resources where products with similar codes are detailed.
Equivalent
The UJ3C065030K3S is a SiC Schottky barrier diode. Its equivalents in terms of functionality and specifications might include:
1. Cree/Wolfspeed C3D06060A
2. ON Semiconductor FFSP3065A
3. Littelfuse LSIC2SD065C03
4. STMicroelectronics STPSC406D
5. ROHM SCS306AH
Ensure to cross-reference specific parameters like voltage, current ratings, and package type to confirm compatibility for your application.
1. Cree/Wolfspeed C3D06060A
2. ON Semiconductor FFSP3065A
3. Littelfuse LSIC2SD065C03
4. STMicroelectronics STPSC406D
5. ROHM SCS306AH
Ensure to cross-reference specific parameters like voltage, current ratings, and package type to confirm compatibility for your application.
Features
The UJ3C065030K3S is a silicon carbide (SiC) Schottky diode, known for its high efficiency and performance in power applications. Here are its key features:
1. Voltage Rating: It typically has a reverse voltage rating of around 650V, suitable for high-voltage applications.
2. Current Rating: This diode can handle a forward current of approximately 30A, making it suitable for medium to high-power applications.
3. Fast Switching: The device offers rapid switching speeds, which reduces energy loss during transitions and improves overall system efficiency.
4. High Temperature Operation: It can operate at high junction temperatures, often up to 175°C, making it reliable in demanding environments.
5. Low Forward Voltage Drop: This feature minimizes power loss, enhancing the efficiency of the power conversion process.
6. Robustness: The SiC technology provides superior thermal performance and robustness compared to traditional silicon diodes.
7. Low Reverse Recovery Charge: This contributes to reduced electromagnetic interference (EMI) and improved efficiency in power electronic circuits.
These features make the UJ3C065030K3S ideal for applications such as power supplies, solar inverters, and motor drives.
1. Voltage Rating: It typically has a reverse voltage rating of around 650V, suitable for high-voltage applications.
2. Current Rating: This diode can handle a forward current of approximately 30A, making it suitable for medium to high-power applications.
3. Fast Switching: The device offers rapid switching speeds, which reduces energy loss during transitions and improves overall system efficiency.
4. High Temperature Operation: It can operate at high junction temperatures, often up to 175°C, making it reliable in demanding environments.
5. Low Forward Voltage Drop: This feature minimizes power loss, enhancing the efficiency of the power conversion process.
6. Robustness: The SiC technology provides superior thermal performance and robustness compared to traditional silicon diodes.
7. Low Reverse Recovery Charge: This contributes to reduced electromagnetic interference (EMI) and improved efficiency in power electronic circuits.
These features make the UJ3C065030K3S ideal for applications such as power supplies, solar inverters, and motor drives.
Pinout
The UJ3C065030K3S is a silicon carbide (SiC) Schottky barrier diode. It typically comes in a TO-252-2 package, which is a surface-mount package. The pin count for this package is usually two pins.
The function of the UJ3C065030K3S is to act as a rectifier diode, providing high efficiency and fast switching capabilities. This component is designed to handle high voltage and high temperature environments, making it suitable for applications such as power supplies, motor drives, and other high-frequency circuits. It offers reduced power losses and improved thermal performance compared to traditional silicon diodes.
The function of the UJ3C065030K3S is to act as a rectifier diode, providing high efficiency and fast switching capabilities. This component is designed to handle high voltage and high temperature environments, making it suitable for applications such as power supplies, motor drives, and other high-frequency circuits. It offers reduced power losses and improved thermal performance compared to traditional silicon diodes.
Manufacturer
The UJ3C065030K3S is manufactured by United Silicon Carbide, which is now part of Qorvo. United Silicon Carbide is known for its work in developing and producing silicon carbide (SiC) semiconductors, which are used in power electronics applications. These semiconductors are valued for their efficiency, higher temperature capabilities, and smaller size compared to traditional silicon-based semiconductors.
Qorvo, the parent company, is a global provider of core technologies and radio frequency (RF) solutions for mobile, infrastructure, and aerospace/defense applications. They deliver high-performance semiconductor solutions that enable a better-connected world. The acquisition of United Silicon Carbide has allowed Qorvo to expand its product portfolio and technological capabilities, particularly in the power electronics sector, which benefits from the enhanced performance characteristics of silicon carbide technology.
Qorvo, the parent company, is a global provider of core technologies and radio frequency (RF) solutions for mobile, infrastructure, and aerospace/defense applications. They deliver high-performance semiconductor solutions that enable a better-connected world. The acquisition of United Silicon Carbide has allowed Qorvo to expand its product portfolio and technological capabilities, particularly in the power electronics sector, which benefits from the enhanced performance characteristics of silicon carbide technology.
Application
The UJ3C065030K3S is a silicon carbide (SiC) MOSFET, known for its high efficiency and fast switching capabilities. It is commonly used in application areas such as power supplies, motor drives, solar inverters, and electric vehicle chargers. Its high temperature and voltage handling capabilities make it ideal for industries requiring robust performance under demanding conditions. Additionally, its efficiency benefits applications involving power conversion and management, enhancing overall system performance and reliability in both industrial and consumer electronics.
Package
The package type for the UJ3C065030K3S is commonly a TO-247. This component is a silicon carbide (SiC) power MOSFET, and the TO-247 package is used for high-power components, providing efficient heat dissipation and electrical performance.
