仕様
| 属性 | 値 |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tube |
| Part Status | Obsolete |
| Transistor Type | 7 NPN Darlington |
| Current - Collector(Ic)(Max) | 500mA |
| Voltage - Collector Emitter Breakdown(Max) | 50V |
| Vce Saturation(Max) @ Ib Ic | 1.6V @ 500µA, 350mA |
| Current - Collector Cutoff(Max) | 50µA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 1000 @ 350mA, 2V |
| Power - Max | 1.47W |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole |
