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VNN3NV04PTR-E
+BOMIC PWR DRIVER N-CHAN 1:1 SOT223
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メーカーRFE/フューゼテック
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メーカー品番 #VNN3NV04PTR-E
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データシート VNN3NV04PTR-E DataSheet
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パッケージ SOT-223
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在庫状況6876
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET II™, VIPower™ |
| ProductStatus | Active |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 36V (Max) |
| Voltage-Supply(Vcc/Vdd) | Not Required |
| Current-Output(Max) | 3.5A |
| RdsOn(Typ) | 120mOhm (Max) |
| InputType | Non-Inverting |
| FaultProtection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
概要
Description
Equivalent
Features
1. MOSFET Type: N-channel, suitable for switching applications.
2. Voltage and Current: Can handle a maximum drain-source voltage of 40V and a continuous drain current of 3A.
3. Low On-Resistance: Features a low RDS(on), which minimizes power loss and increases efficiency.
4. Package: Available in a compact SOT-23 package, making it suitable for space-constrained applications.
5. Thermal Performance: Offers good thermal efficiency, important for maintaining performance at various power levels.
6. Applications: Ideal for use in DC-DC converters, load switches, and battery-powered applications.
7. Enhanced Gate Protection: Includes ESD protection which enhances reliability and durability.
8. Performance: Favors applications requiring quick switching speeds and low power consumption.
This MOSFET is particularly suited for applications requiring compact size and efficient power usage, like portable electronics and automotive systems.
Pinout
The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET, turning it on or off. Applying a voltage above a certain threshold between the gate and source turns the device on.
2. Drain (D): This is the output terminal where the load is connected. The current flows between the drain and source when the MOSFET is in the on state.
3. Source (S): This is the terminal connected to the ground or negative rail in most applications. It's the reference point for the gate voltage.
Additionally, the package has a metal tab that serves as a heat dissipation path and is typically connected to the drain terminal. The VNN3NV04PTR-E is designed for high-efficiency automotive applications, providing low on-state resistance and high-speed operation.