仕様
| 属性 | 値 |
| Supplier | Vishay General Semiconductor - Diodes Division |
| Package / Case | Tube |
| Part Status | Obsolete |
| IGBT Type | Trench |
| Configuration | Half Bridge |
| Voltage - Collector Emitter Breakdown(Max) | 650 V |
| Current - Collector(Ic)(Max) | 221 A |
| Power - Max | 600 W |
| Vce(on)(Max) @ Vge Ic | 2.12V @ 15V, 200A |
| Current - Collector Cutoff(Max) | 60 µA |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
