W632GU6NB-11

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W632GU6NB-11

+BOM

IC DRAM 2GBIT PAR 96VFBGA

  • メーカーウィンボンド・エレクトロニクス

  • メーカー品番 #W632GU6NB-11

  • データシート W632GU6NB-11 DataSheet

  • 在庫状況4575

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性 値
Part Status Obsolete
Base Product Number W632GU6
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 2Gbit
Memory Organization 128M x 16
Memory Interface Parallel
Clock Frequency 933 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 96-VFBGA
Supplier Device Package 96-VFBGA (7.5x13)
Packaging Tray
Access Time 20 ns

概要

Description

The W632GU6NB-11 appears to be a specific model number, possibly relating to a product such as a technological device, component, or system. Without additional context, it's difficult to provide a precise introduction. However, in general, model numbers like W632GU6NB-11 are used by manufacturers to identify specific products within a larger product line, offering details about specifications, version, or capabilities. For a thorough understanding, one would typically consult the product's manual, datasheet, or official website. To obtain relevant information, consider reaching out to the manufacturer or checking detailed product listings where such models are sold.

Equivalent

The W632GU6NB-11 is a DDR3 SDRAM chip manufactured by Winbond. Equivalent products could include DDR3 SDRAM chips with similar specifications from other manufacturers such as the Micron MT41K256M16TW-107, Samsung K4B2G1646F-BCK0, or Hynix H5TQ2G63GFR-RDC. These chips typically offer similar performance characteristics like capacity, speed (e.g., 1600 MT/s), and voltage requirements, making them potential alternatives for specific applications. Always verify compatibility for your specific use case.

Pinout

The W632GU6NB-11 is a DRAM component manufactured by Winbond. It is a 2Gb (gigabit) DDR3 SDRAM, organized as 128M x 16 bits. The chip features a 96-ball FBGA (Fine-Pitch Ball Grid Array) package, which indicates the pin count is 96 balls.
The primary function of the W632GU6NB-11 is to provide high-speed temporary storage for data in computing systems, allowing for efficient data transfer and processing. It operates with a maximum clock frequency of 933 MHz, providing a data rate of up to 1866 Mbps (megabits per second). This DRAM is used in various applications, including computers, servers, and other electronic devices requiring quick access to large amounts of data.
The device supports standard DDR3 features such as auto-refresh, self-refresh modes, and low power consumption. These features contribute to the efficiency and performance of systems utilizing this DRAM component. For detailed information on specific pin functions, reference to the datasheet is recommended.

Manufacturer

The W632GU6NB-11 is a DRAM component manufactured by Winbond Electronics Corporation. Winbond is a Taiwanese company that specializes in the design and production of semiconductor products, particularly memory solutions. Established in 1987, Winbond is well-regarded in the tech industry for its focus on providing a wide range of memory products, including DRAM, NOR Flash, and NAND Flash memories. The company serves various markets, including automotive, industrial, consumer electronics, and communications. Winbond's emphasis on innovation and reliability has made it a significant player in the global memory chip market.

Application

The W632GU6NB-11 is a type of DRAM (Dynamic Random-Access Memory) chip, typically used in areas requiring high-speed data processing and storage. Its application areas include:
1. Computing Devices: Utilized in desktops, laptops, and servers for efficient multitasking and faster data retrieval.
2. Consumer Electronics: Found in smartphones, tablets, and gaming consoles, improving performance and responsiveness.
3. Networking Equipment: Used in routers and switches for handling large amounts of data traffic.
4. Industrial Systems: Deployed in automation equipment needing reliable and rapid data access.
5. Embedded Systems: Included in IoT devices for managing data-intensive tasks.
These applications leverage DRAM's speed and efficiency to enhance overall system performance.

Package

The package type for W632GU6NB-11 is a 54-ball Fine-Pitch Ball Grid Array (FBGA).

Frequently Asked Questions


Q: What is the memory type and technology of W632GU6NB-11?
A: It is a Volatile DRAM using SDRAM - DDR3L technology, optimized for low-voltage operations at 1.283V–1.45V.


Q: What is the memory capacity and organization?
A: It offers 2Gbit capacity organized as 128M x 16, suitable for high-density data processing in embedded systems.


Q: What clock frequency does this component support?
A: It supports a clock frequency of 933 MHz, enabling high-speed data transfer for performance-critical applications.


Q: What is the supply voltage range for this DDR3L chip?
A: The operating voltage range is 1.283V to 1.45V, compliant with DDR3L low-power standards.


Q: What is the operating temperature range?
A: It operates from 0°C to 95°C (TC), making it suitable for industrial and consumer electronics with moderate thermal environments.


Q: Does this part come in a surface mount package?
A: Yes, it is housed in a 96-VFBGA (7.5x13 mm) surface mount package, ideal for compact PCB layouts.


Q: What is the access time and write cycle time?
A: Access time is 20 ns, and write cycle time (Word, Page) is 15 ns, ensuring reliable read/write operations.


Q: Is the W632GU6NB-11 currently in production?
A: No, its Part Status is listed as Obsolete; check inventory or alternatives for new designs.


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