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ZVN3306FTA
+BOMMOSFET N-CH 60V 150MA SOT23-3
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メーカーアナログ・デバイセズ
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メーカー品番 #ZVN3306FTA
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データシート ZVN3306FTA DataSheet
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在庫状況11222
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 150mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.4V @ 1mA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 35 pF @ 18 V |
| Power Dissipation (Max) | 330mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
概要
Description
The ZVN3306FTA is an N-channel enhancement mode field-effect transistor (FET) commonly used in various electronic applications. It is known for its low on-resistance and high-speed switching capabilities, making it suitable for power management and signal processing in consumer electronics, automotive systems, and industrial equipment.
Key features of the ZVN3306FTA include its ability to handle continuous drain current and its capability to withstand high voltages, typically around 60V. The device is housed in a compact SOT-23 package, which is ideal for space-constrained designs while providing adequate power dissipation. It is also characterized by low gate threshold voltage, ensuring easy drive from low-voltage circuits, and it has a high level of thermal stability.
This MOSFET is often chosen for applications requiring efficient load switching and is valued for its robustness and reliability. Its small size and efficiency make it a popular choice in circuits where power efficiency and space savings are priorities.
Key features of the ZVN3306FTA include its ability to handle continuous drain current and its capability to withstand high voltages, typically around 60V. The device is housed in a compact SOT-23 package, which is ideal for space-constrained designs while providing adequate power dissipation. It is also characterized by low gate threshold voltage, ensuring easy drive from low-voltage circuits, and it has a high level of thermal stability.
This MOSFET is often chosen for applications requiring efficient load switching and is valued for its robustness and reliability. Its small size and efficiency make it a popular choice in circuits where power efficiency and space savings are priorities.
Equivalent
The ZVN3306FTA is an N-channel MOSFET. Equivalent products include:
1. 2N7002 - A widely used N-channel MOSFET with similar specifications.
2. BSS138 - Another N-channel MOSFET suitable for low current applications.
3. PMV20XN - Offers similar characteristics for switching applications.
When selecting an equivalent, ensure to compare key specifications like voltage, current rating, and package type to match your application needs.
1. 2N7002 - A widely used N-channel MOSFET with similar specifications.
2. BSS138 - Another N-channel MOSFET suitable for low current applications.
3. PMV20XN - Offers similar characteristics for switching applications.
When selecting an equivalent, ensure to compare key specifications like voltage, current rating, and package type to match your application needs.
Features
The ZVN3306FTA is an N-channel enhancement mode MOSFET known for its compact size and efficient performance. Key features include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 0.53A, making it suitable for low to medium power applications.
2. Low On-Resistance: It offers low on-state resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation.
3. Fast Switching Speed: The MOSFET is designed for fast switching, which is crucial in applications requiring quick response times, such as DC-DC converters and high-speed pulse circuits.
4. SOT-23 Package: It comes in a small SOT-23 surface-mount package, making it ideal for compact circuit designs and high-density board layouts.
5. Thermal Performance: It provides good thermal performance due to its efficient heat dissipation capabilities, which is important for maintaining stability in various electronic applications.
These features make the ZVN3306FTA a versatile choice for numerous electronic applications, including switching regulators, relay drivers, and power management systems.
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 0.53A, making it suitable for low to medium power applications.
2. Low On-Resistance: It offers low on-state resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation.
3. Fast Switching Speed: The MOSFET is designed for fast switching, which is crucial in applications requiring quick response times, such as DC-DC converters and high-speed pulse circuits.
4. SOT-23 Package: It comes in a small SOT-23 surface-mount package, making it ideal for compact circuit designs and high-density board layouts.
5. Thermal Performance: It provides good thermal performance due to its efficient heat dissipation capabilities, which is important for maintaining stability in various electronic applications.
These features make the ZVN3306FTA a versatile choice for numerous electronic applications, including switching regulators, relay drivers, and power management systems.
Pinout
The ZVN3306FTA is a N-channel enhancement mode MOSFET. It typically comes in a TO-92 or similar package, which usually has three pins. The basic pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's conductivity. Applying a voltage to the gate allows current to flow between the source and drain.
2. Drain (D): This pin is connected to the load. When the MOSFET is turned on (by a suitable voltage at the gate), current flows from the drain to the source.
3. Source (S): This is the pin through which current leaves the MOSFET. It is typically connected to ground in many applications.
The ZVN3306FTA is commonly used for switching applications due to its capability of handling relatively high voltage and current in a compact package. Its small form factor makes it suitable for various electronic applications requiring efficient switching.
1. Gate (G): This pin is used to control the MOSFET's conductivity. Applying a voltage to the gate allows current to flow between the source and drain.
2. Drain (D): This pin is connected to the load. When the MOSFET is turned on (by a suitable voltage at the gate), current flows from the drain to the source.
3. Source (S): This is the pin through which current leaves the MOSFET. It is typically connected to ground in many applications.
The ZVN3306FTA is commonly used for switching applications due to its capability of handling relatively high voltage and current in a compact package. Its small form factor makes it suitable for various electronic applications requiring efficient switching.
Manufacturer
The ZVN3306FTA is manufactured by Diodes Incorporated, a global manufacturer and supplier of application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. Diodes Incorporated focuses on delivering high-quality semiconductor products to a wide range of industries, including consumer electronics, computing, communications, industrial, and automotive markets. The company is known for its wide portfolio of products and its emphasis on innovation and customer service.
Application
The ZVN3306FTA is a small-signal N-channel MOSFET commonly used in various electronic applications. Its key application areas include:
1. Switching Circuits: Utilized in low-power switching applications due to its low on-resistance.
2. Signal Amplification: Suitable for amplifying weak signals in analog circuits.
3. Battery-powered Devices: Ideal for portable devices, owing to its efficient power management capabilities.
4. Load Management: Used for controlling loads in embedded systems and consumer electronics.
5. Level Shifting: Facilitates interfacing between different logic levels in digital circuits.
These properties make it a versatile choice for designers working on compact and energy-efficient circuit solutions.
1. Switching Circuits: Utilized in low-power switching applications due to its low on-resistance.
2. Signal Amplification: Suitable for amplifying weak signals in analog circuits.
3. Battery-powered Devices: Ideal for portable devices, owing to its efficient power management capabilities.
4. Load Management: Used for controlling loads in embedded systems and consumer electronics.
5. Level Shifting: Facilitates interfacing between different logic levels in digital circuits.
These properties make it a versatile choice for designers working on compact and energy-efficient circuit solutions.
Package
The ZVN3306FTA is a N-channel MOSFET housed in a SOT-23 package. This package type is commonly used for small-scale, surface-mount applications due to its compact size, making it ideal for use in space-constrained electronic circuits.
