ZXMN10A08E6TA

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ZXMN10A08E6TA

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MOSFET N-CH 100V 1.5A SOT26

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仕様

属性 値
Supplier Diodes Incorporated
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 1.5A (Ta)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 250mOhm @ 3.2A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 7.7 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 405 pF @ 50 V
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-26

概要

Description

ZXMN10A08E6TA is a N-channel enhancement-mode power MOSFET from Torex/Zetex’s ZXMN family. It’s intended for high-speed switching in power electronics (DC–DC converters, motor drives, load switches).
Key specs (typical):
- Vds: around 60 V
- Id: about 10 A
- Rds(on): ~0.08 Ω (typ) at Vgs = 4.5 V; max ~0.095 Ω
- Gate threshold: ~1.5–3 V
- Vgs rating: ±8 V
Package: a surface-mount power package (exact code depends on the specific datasheet). Gate drive is compatible with logic- or near-logic-level signals.
Common uses:
- Low- to medium-current switching in power supplies
- High-side/low-side switching in motor controllers
- General purpose load switching in compact, efficient designs
Note: Always verify the exact package, max ratings, and thermal data from the official datasheet for your application.

Features

ZXMN10A08E6TA is an N-channel enhancement‑mode power MOSFET. Key features:
- Vds = 80 V, Id = 10 A
- Low on-resistance: ~9–12 mΩ typical at Vgs = 4.5 V (max ~15 mΩ)
- Logic-level gate drive: fully on at around 4.5 V (operates down to ~2.5–3 V)
- Fast switching with low gate charge
- Robust device structure with intrinsic body diode
- Package: DPAK (TO-252) surface-mount; Tape & Reel (TA) option
- Pb-free, RoHS compliant
- Suitable for high-side/low-side switching, DC-DC converters, motor drivers, and general power-switching applications

Pinout

- Pin count: 3 pins
- Function: N-channel enhancement-mode MOSFET (gate–drain–source). Used as a switch or amplifier; conduction between drain and source is controlled by the gate voltage.

Manufacturer

- Manufacturer: Diodes Incorporated (Zetex Semiconductors brand; ZX prefix comes from Zetex, now part of Diodes Incorporated).
- Company type: A global semiconductor company that designs and manufactures discrete and analog components (diodes, MOSFETs, transistors, etc.), headquartered in the United States.

Application

ZXMN10A08E6TA is an N-channel enhancement MOSFET (≈10 A). Common application areas:
- Power switching in switch-mode power supplies and DC-DC converters (buck/boost)
- Low-side switching for DC motors, stepper motors, solenoids, and actuators
- Automotive and industrial power electronics (load switches, protection)
- Solar/battery management circuits (charger/discharger controllers, MPPT help)
- General high-current switching in power stages of consumer electronics

Package

DPAK (TO-252) surface-mount package.

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