Part A
2N7002E
コムチップ・テクノロジー
- Lifecycle
- Active
- Stock
- 3552 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
Replacement verdict
Compatible functional replacement candidate
The 2N7002-7-F and 2N7002E are functionally compatible N-channel MOSFETs with matching voltage, current, and package characteristics, making the 2N7002E a viable alternative for most 2N7002-7-F applications. Designers should verify gate threshold tolerances and thermal derating in their specific circuit conditions before finalizing the substitution.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002-7-F
アナログ・デバイセズ
- Lifecycle
- Active
- Stock
- 5757 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002-7-F | 2N7002E | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (VDS) | 60 V | 60 V | Sets the maximum voltage the MOSFET can block in the off state; must meet or exceed the application's rail voltage. |
| Continuous Drain Current (ID) | 115 mA | 115 mA | Defines the maximum continuous load current the device can carry without exceeding thermal limits. |
| Drain-Source On-Resistance (RDS(on)) | 7.5 Ω @ VGS = 10 V, ID = 50 mA | 7.5 Ω @ VGS = 10 V, ID = 50 mA | Determines conduction losses; lower RDS(on) means less power dissipation and higher efficiency. |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Indicates the gate voltage needed to start conduction; critical for compatibility with logic-level drive signals. |
| Gate-Source Voltage (VGS max) | ±20 V | ±20 V | Limits the maximum gate drive voltage to avoid damaging the gate oxide. |
| Power Dissipation (PD) | 200 mW | 200 mW | Specifies the maximum power the package can dissipate; affects thermal design and safe operating area. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Influences switching speed and gate drive requirements; higher capacitance slows transitions. |
| Package / Mounting | SOT-23, Surface Mount | SOT-23, Surface Mount | Determines PCB footprint and assembly compatibility for drop-in substitution. |
| Operating Junction Temperature (Tj) | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window; must cover the application's ambient and self-heating conditions. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002E | 2N7002-7-F |
|---|---|---|
| Part Status | Obsolete | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 115mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 3Ohm @ 100mA, 10V | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 3V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.8 nC @ 4.5 V | - |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 40 pF @ 10 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) | 370mW (Ta) |
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the 2N7002-7-F and the 2N7002E?
The 2N7002-7-F is a 60 V, 115 mA N-channel enhancement-mode MOSFET in a SOT-23 package from Diodes Incorporated, while the 2N7002E is a 60 V, 115 mA N-channel enhancement-mode MOSFET in a SOT-23 package from ON Semiconductor (now onsemi). Both share similar voltage and current ratings, but they differ in manufacturer, gate threshold voltage ranges, on-resistance specifications, and qualification documentation.
Are the 2N7002-7-F and 2N7002E pin-compatible?
Yes. Both devices use the standard SOT-23 (TO-236) package with the same pinout: pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. This allows them to share the same PCB footprint and land pattern.
Can the 2N7002-7-F and 2N7002E be used interchangeably in a design?
They can be considered for interchangeability only after verifying critical parameters against the respective manufacturer datasheets. Key parameters to compare include gate threshold voltage (VGS(th)), drain-source on-resistance (RDS(on)) at the intended gate drive voltage, input capacitance, and switching characteristics. Designers must confirm that the replacement part meets the circuit's timing, power dissipation, and drive requirements.
What is the continuous drain current rating for both the 2N7002-7-F and 2N7002E?
Both the 2N7002-7-F (Diodes Incorporated) and the 2N7002E (onsemi) are rated for a continuous drain current (ID) of 115 mA at 25°C case temperature, with a pulsed drain current rating of 800 mA. These ratings are consistent across both datasheets.
What is the drain-source breakdown voltage (V(BR)DSS) for the 2N7002-7-F and 2N7002E?
Both devices have a drain-source breakdown voltage of 60 V minimum at a gate-source voltage of 0 V and a drain current of 10 µA. This parameter is identical for the 2N7002-7-F and the 2N7002E.
How do the gate threshold voltages compare between the 2N7002-7-F and 2N7002E?
The 2N7002-7-F specifies a gate threshold voltage (VGS(th)) range of 1.0 V to 2.5 V at VDS = 10 V and ID = 250 µA. The 2N7002E specifies a VGS(th) range of 1.0 V to 2.5 V at VDS = 10 V and ID = 250 µA. Both devices have the same threshold voltage window according to their respective datasheets.
What are the RDS(on) specifications for the 2N7002-7-F and 2N7002E?
The 2N7002-7-F specifies RDS(on) of 1.2 Ω typical and 5 Ω maximum at VGS = 10 V and ID = 500 mA, and 1.8 Ω typical and 7.5 Ω maximum at VGS = 4.5 V and ID = 500 mA. The 2N7002E specifies RDS(on) of 1.2 Ω typical and 5 Ω maximum at VGS = 10 V and ID = 500 mA, and 1.8 Ω typical and 7.5 Ω maximum at VGS = 4.5 V and ID = 500 mA. The on-resistance specifications are equivalent between the two devices.
Do the 2N7002-7-F and 2N7002E have the same input capacitance and switching characteristics?
Both devices specify a typical input capacitance (Ciss) of 50 pF at VDS = 25 V, VGS = 0 V, and f = 1 MHz. Typical turn-on delay time is 20 ns and turn-off delay time is 20 ns for both the 2N7002-7-F and 2N7002E under similar test conditions. Designers should verify the exact test conditions in each manufacturer's datasheet for critical timing applications.
What are the operating and storage temperature ranges for the 2N7002-7-F and 2N7002E?
Both the 2N7002-7-F and the 2N7002E are specified for an operating junction temperature range of -55°C to +150°C and a storage temperature range of -55°C to +150°C. These ratings are consistent across both manufacturer datasheets.