Part A
2N7002K-T1-GE3
ビシェイ・シリコニクス
- Lifecycle
- Active
- Stock
- 4371 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
Replacement verdict
Compatible functional replacement candidate
The 2N7002K-T1-E3 and 2N7002K-T1-GE3 are functionally equivalent N-channel MOSFETs sharing identical electrical characteristics, package footprint, and pin configuration. The GE3 suffix denotes a halogen-free, RoHS-compliant molding compound, making the GE3 variant the preferred choice for environmentally regulated designs while remaining a direct drop-in replacement for the E3 version.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Environmental Compliance
High match
Parts at a glance
Part B
2N7002K-T1-E3
ビシェイ・シリコニクス
- Lifecycle
- Active
- Stock
- 3495 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002K-T1-GE3 | 2N7002K-T1-E3 |
|---|---|---|
| Series | TrenchFET® | TrenchFET® |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.6 nC @ 4.5 V | 0.6 nC @ 4.5 V |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 30 pF @ 25 V | 30 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |