2N7002K-7 vs 2N7002K

2N7002K-7と2N7002Kの詳細な比較では、それぞれの仕様と主要機能に関する貴重な洞察を提供します。RoHS指令への準拠、REACH規則、シリーズ、実装スタイル、パッケージタイプ、その他の関連特性など、重要な要素を詳細に網羅しています。違いを並べて表示することで、部品選定が容易になり、特定のアプリケーションに最適なオプションを選択しやすくなります。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K and 2N7002K-7 are functionally equivalent N-channel MOSFETs sharing identical electrical characteristics, package type, and pinout. The 2N7002K-7 represents a tape-and-reel packaging variant of the same device, making it a direct drop-in replacement for automated assembly processes.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
On-Resistance High match

Parts at a glance

Part A

2N7002K-7

アナログ・デバイセズ

Lifecycle
Active
Stock
5630 個数
Package
SOT-23-3
Series
トランジスタ - FET、MOSFET - シングル
Part B

2N7002K

レクトロンUSA

Lifecycle
Active
Stock
3271 個数
Package
SOT-23
Series
トランジスタ - FET、MOSFET - シングル

Key differences

Rows are prioritized by design impact. Highlighted values require attention during substitution.

Key electrical and mechanical differences between the two devices

Parameter 2N7002K 2N7002K-7 Why it matters
Drain-Source Voltage (VDS) 60 V 60 V Defines the maximum voltage the MOSFET can block; must match or exceed the circuit's voltage stress for safe substitution.
Continuous Drain Current (ID) 300 mA 300 mA Sets the maximum continuous current the device can carry; identical ratings ensure equivalent load-driving capability.
Drain-Source On-Resistance (RDS(on)) 1.6 Ω @ VGS = 10 V 1.6 Ω @ VGS = 10 V Determines conduction losses and voltage drop; matching values preserve efficiency and thermal behavior.
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V 1.0 V to 2.5 V Defines the gate voltage needed to turn the device on; identical ranges ensure compatible logic-level drive.
Gate-Source Voltage (VGS max) ±20 V ±20 V Maximum safe gate drive voltage; matching limits protect the gate oxide under the same drive conditions.
Power Dissipation (PD) 350 mW 350 mW Indicates thermal capability; identical ratings mean the same power handling in the application.
Input Capacitance (Ciss) 50 pF 50 pF Affects switching speed and gate drive requirements; matching capacitance preserves dynamic performance.
Package / Mounting SOT-23 Surface Mount SOT-23 Surface Mount Determines PCB footprint and assembly compatibility; identical packages allow direct drop-in replacement.
Channel Type N-Channel N-Channel Defines polarity and circuit topology; matching channel type is essential for functional equivalence.

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002K-7 2N7002K
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 380mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 5V, 10V
Rds On(Max) @ Id Vgs 2Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 1mA 1.9V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.3 nC @ 4.5 V -
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V
Power Dissipation (Max) 370mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount

Frequently asked questions

What is the difference between the 2N7002K and the 2N7002K-7?

The 2N7002K and 2N7002K-7 are the same N-channel enhancement-mode MOSFET die and electrical specification; the "-7" suffix denotes the manufacturer's tape-and-reel packaging option (7-inch reel) rather than a different device. Both are rated 60 V VDS, 300 mA continuous drain current, and are offered in the SOT-23 (TO-236) package.

Are the 2N7002K and 2N7002K-7 electrically identical?

Yes. The "-7" designation is a packaging/reel suffix, so the datasheet electrical characteristics such as VDS = 60 V, VGS(th) range, RDS(on), and drain current ratings are the same for both ordering codes.

Can the 2N7002K-7 be used as a drop-in replacement for the 2N7002K?

Yes, provided the board accepts the SOT-23 package and the reel quantity is acceptable for the assembly process. Since the die and electrical parameters are identical, the two ordering codes are functionally interchangeable in the same footprint.

What package do the 2N7002K and 2N7002K-7 use?

Both devices are supplied in the SOT-23 (also designated TO-236 or SC-59) surface-mount package, with the standard small-signal MOSFET pinout: gate, source, and drain on the three leads.

What are the key ratings of the 2N7002K and 2N7002K-7?

Verified datasheet ratings include VDS = 60 V, VGS = ±20 V, continuous drain current ID = 300 mA at 25 °C, and power dissipation around 350 mW in the SOT-23 package. RDS(on) is typically specified at VGS = 10 V and VGS = 4.5 V.

Why do distributors list the 2N7002K and 2N7002K-7 as separate part numbers?

Distributors separate them because the suffix encodes the packaging format and reel size, which affects minimum order quantity, inventory handling, and automated pick-and-place feeder setup, even though the semiconductor device itself is the same.

Which applications are suitable for the 2N7002K and 2N7002K-7?

Both are used as small-signal switching MOSFETs in level shifting, load switching, relay and LED driving, and low-current gate drive circuits where a 60 V, 300 mA N-channel device in SOT-23 is adequate.