Part A
2N7002,215
ネクスペリアUSA株式会社
- Lifecycle
- Active
- Stock
- 6582 個数
- Package
- SOT-23-3
- Series
- トランジスタ - FET、MOSFET - シングル
Replacement verdict
Compatible functional replacement candidate
The 2N7002K-7 and 2N7002,215 are functionally compatible N-channel MOSFETs suitable for direct substitution in most low-power switching applications. Both devices share identical drain-source voltage, continuous drain current, and power dissipation ratings, with the primary distinction being package style and gate threshold voltage tolerance. Designers should verify gate drive compatibility and thermal layout when substituting between the SOT-23 and TO-236AB packages.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
Validation required
Gate Threshold Voltage
Validation required
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002,215 | 2N7002K-7 |
|---|---|---|
| Series | TrenchMOS™ | - |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 380mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 1mA |
| Vgs(Max) | ±30V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 10 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 830mW (Ta) | 370mW (Ta) |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Charge(Qg)(Max) @ Vgs | - | 0.3 nC @ 4.5 V |