Part A
FDG6316P
オンセミコンダクター社
- Lifecycle
- Active
- Stock
- 4567 個数
- Series
- トランジスタ - FET、MOSFET - FET、MOSFETアレイ
Parts at a glance
Part B
FDG6332C-PG
オンセミコンダクター社
- Lifecycle
- Active
- Stock
- 3818 個数
- Package
- SC-88
- Series
- トランジスタ - FET、MOSFET - アレイ
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | FDG6316P | FDG6332C-PG |
|---|---|---|
| Supplier | - | onsemi |
| Series | PowerTrench® | PowerTrench® |
| Part Status | Obsolete | Obsolete |
| FET Type | - | N and P-Channel Complementary |
| FET Feature | Logic Level Gate | Standard |
| Drain to Source Voltage (Vdss) | 12V | 20V |
| Current - Continuous Drain(Id) @ 25°C | - | 700mA (Ta), 600mA (Ta) |
| Rds On(Max) @ Id Vgs | - | 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V |
| Vgs(th)(Max) @ Id | - | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | - | 1.5nC @ 4.5V, 2nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | - | 113pF @ 10V, 114pF @ 10V |
| Power - Max | 300mW | 300mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | FDG6316 | - |
| Technology | MOSFET (Metal Oxide) | - |
| Configuration | 2 P-Channel (Dual) | - |
| Current - Continuous Drain (Id) @ 25°C | 700mA | - |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 700mA, 4.5V | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 146pF @ 6V | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |