Part A
IRF5803TRPBF
インフィニオンテクノロジーズ
- Lifecycle
- Active
- Stock
- 4720 個数
- Series
- トランジスタ - FET、MOSFET -シングルFET、MOSFET
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | IRF5803TRPBF | IRF5851 |
|---|---|---|
| Supplier | - | Infineon Technologies |
| Series | HEXFET® | HEXFET® |
| Part Status | Obsolete | Obsolete |
| FET Type | P-Channel | N and P-Channel |
| FET Feature | - | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40 V | 20V |
| Current - Continuous Drain(Id) @ 25°C | - | 2.7A, 2.2A |
| Rds On(Max) @ Id Vgs | - | 90mOhm @ 2.7A, 4.5V |
| Vgs(th)(Max) @ Id | - | 1.25V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | - | 6nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | - | 400pF @ 15V |
| Power - Max | - | 960mW |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | IRF5803 | - |
| Technology | MOSFET (Metal Oxide) | - |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | - |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V | - |
| Power Dissipation (Max) | 2W (Ta) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |