Part A
JANTX2N6796
マイクロセミコーポレーション
- Lifecycle
- Active
- Stock
- 2949 個数
- Package
- TO-205AF-3
- Series
- トランジスタ - FET、MOSFET - シングル
Parts at a glance
Part B
JANTX2N2329
マイクロチップ・テクノロジー
- Lifecycle
- Active
- Stock
- 6723 個数
- Package
- TO-205AA, TO-5-3 Metal Can
- Series
- サイリスタ - サイリスタ
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | JANTX2N6796 | JANTX2N2329 |
|---|---|---|
| Supplier | - | Microchip Technology |
| Series | Military, MIL-PRF-19500/557 | Military, MIL-PRF-19500/276 |
| Part Status | Obsolete | Obsolete |
| Voltage - Off State | - | 400 V |
| Voltage - Gate Trigger(Vgt)(Max) | - | 800 mV |
| Current - Gate Trigger(Igt)(Max) | - | 200 µA |
| Current - On State(It(AV))(Max) | - | 220 mA |
| Current - Hold(Ih)(Max) | - | 2 mA |
| SCR Type | - | Sensitive Gate |
| Operating Temperature | -55°C ~ 150°C (TJ) | -65°C ~ 125°C |
| Mounting Type | Through Hole | Through Hole |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 100 V | - |
| Current - Continuous Drain(Id) @ 25°C | 8A (Tc) | - |
| Drive Voltage(Max Rds On Min Rds On) | 10V | - |
| Rds On(Max) @ Id Vgs | 195mOhm @ 8A, 10V | - |
| Vgs(th)(Max) @ Id | 4V @ 250µA | - |
| Gate Charge(Qg)(Max) @ Vgs | 28.51 nC @ 10 V | - |
| Vgs(Max) | ±20V | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) | - |