NCP51530BDR2G vs NCP5181DR2G

NCP51530BDR2GとNCP5181DR2Gの詳細な比較では、それぞれの仕様と主要機能に関する貴重な洞察を提供します。RoHS指令への準拠、REACH規則、シリーズ、実装スタイル、パッケージタイプ、その他の関連特性など、重要な要素を詳細に網羅しています。違いを並べて表示することで、部品選定が容易になり、特定のアプリケーションに最適なオプションを選択しやすくなります。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

NCP51530BDR2G

オンセミコンダクター社

Lifecycle
Active
Stock
4017 個数
Series
Power Management (PMIC) - Full, Half-Bridge (H Bridge) Drivers
Part B

NCP5181DR2G

オンセミコンダクター社

Lifecycle
Active
Stock
4243 個数
Package
SOIC-8
Series
PMIC - ゲートドライバ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification NCP51530BDR2G NCP5181DR2G
Part Status Active Last Time Buy
Driven Configuration - Half-Bridge
Channel Type - Independent
Number of Drivers - 2
Gate Type - N-Channel MOSFET
Voltage - Supply 10V ~ 17V 10V ~ 20V
Logic Voltage - VILVIH - 0.8V, 2.3V
Current - Peak Output(Source Sink) - 1.4A, 2.2A
Input Type - Non-Inverting
High Side Voltage - Max(Bootstrap) - 600 V
Rise / Fall Time(Typ) - 40ns, 20ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number NCP51530 -
Output Configuration Half Bridge (2) -
Applications General Purpose -
Interface Logic, PWM -
Load Type Inductive, Capacitive -
Technology Power MOSFET -
Current - Output / Channel 3.5A -
Current - Peak Output 3A -
Voltage - Load 700V -
Features Bootstrap Circuit -
Fault Protection UVLO -
Packaging Cut Tape (CT), Tape & Reel (TR) -