仕様
| 属性 | 値 |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 1 A |
| Voltage - Collector Emitter Breakdown(Max) | 800 V |
| Vce Saturation(Max) @ Ib Ic | 1V @ 100mA, 800mA |
| Current - Collector Cutoff(Max) | 100µA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 60 @ 100mA, 5V |
| Power - Max | 1 W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
