| 属性 |
値 |
| Supplier |
Microchip Technology |
| Package / Case |
Tube |
| Series |
POWER MOS 8™ |
| Part Status |
Obsolete |
| IGBT Type |
PT |
| Voltage - Collector Emitter Breakdown(Max) |
600 V |
| Current - Collector(Ic)(Max) |
183 A |
| Current - Collector Pulsed(Icm) |
307 A |
| Vce(on)(Max) @ Vge Ic |
2.5V @ 15V, 62A |
| Power - Max |
780 W |
| Switching Energy |
1.354mJ (on), 1.614mJ (off) |
| Input Type |
Standard |
| Gate Charge |
294 nC |
| Td(on / off) @ 25°C |
28ns/212ns |
| Test Condition |
400V, 62A, 4.7Ohm, 15V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
