BSC190N12NS3 G

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BSC190N12NS3 G

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MOSFETs N-Ch 120V 44A TDSON-8 OptiMOS 3

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仕様

属性 値
Packaging MouseReel
Standard Pack Qty 5000

概要

Description

"BSC190N12NS3 G" seems to refer to a specific topic or code, but without additional context, it's challenging to provide a precise answer. If it's a course code, it might be related to a specific academic subject or module in a university setting. If it's a product or technical specification, it might pertain to a model, batch, or version number.
For a biological sciences course, "BSC" often stands for Bachelor of Science, while numbers and letters could indicate the course number, section, or specialization. In an academic context, an introduction to a course with this code might cover the foundational concepts, objectives, and structure of the course, including key topics and expectations for students.
If you have more details or context, such as the field (e.g., biology, engineering) or institution, I can provide a more accurate description.

Equivalent

The BSC190N12NS3 G is a power MOSFET from Infineon. Equivalent products that offer similar characteristics might include:
1. NXP PSMN1R2-25YLD
2. ON Semiconductor NTMFS5C604NL
3. Vishay SiR422DP
4. STMicroelectronics STL140N10F7
Ensure to verify the specifications like voltage, current ratings, Rds(on), and package type to ensure compatibility with your application.

Features

The BSC190N12NS3 G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications. Here are some key features:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_ds) of around 120V and a continuous drain current (I_d) of about 10A, making it suitable for medium-power applications.
2. R_DS(on): The on-resistance is usually low, around 190 mΩ, which helps in reducing power loss during operation.
3. Package: It often comes in a TO-220 package, which is conducive to efficient heat dissipation and easy integration into circuits.
4. Switching Speeds: The MOSFET is designed for fast switching, enhancing efficiency in applications like power supplies and motor control.
5. Thermal Performance: It typically has good thermal performance, handling power dissipation in demanding environments effectively.
6. Applications: Commonly used in DC-DC converters, motor drivers, and power management in various electronic devices.
These features make the BSC190N12NS3 G a versatile component for use in power electronics.

Pinout

The BSC190N12NS3 G is a power MOSFET produced by Infineon Technologies. It typically comes in a TO-263-3 package, which has three pins. The primary functions of this device are to act as a switch or amplifier in electronic circuits, particularly for applications requiring high efficiency and power handling, such as synchronous rectification in DC-DC converters or motor drives.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET. When voltage is applied to the gate, it allows current to flow between the drain and the source.
2. Drain (D): This pin is the terminal through which the main current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): This pin is the terminal through which the main current enters the MOSFET.
This MOSFET is designed for high-speed switching and efficient power handling, making it suitable for a variety of power management applications.

Manufacturer

The BSC190N12NS3 G is manufactured by Infineon Technologies. Infineon is a German semiconductor company known for producing a wide range of electronic components, with a focus on power semiconductors, automotive electronics, security ICs, and microcontrollers. The company is a major player in the global semiconductor industry and provides products and solutions for various applications, including automotive, industrial power control, power management, and digital security. Infineon's expertise in power semiconductors makes it a key supplier for products like the BSC190N12NS3 G, which is typically used in power management and electronic switching applications.

Application

The BSC190N12NS3 G is a specific type of Insulated Gate Bipolar Transistor (IGBT), which is commonly used in various applications due to its efficiency in handling high voltage and current. Typical application areas include:
1. Power Supplies: Used in switch-mode power supplies for improved efficiency.
2. Motor Drives: Essential in drives for industrial motors and electric vehicles.
3. Inverters: Utilized in inverter circuits for renewable energy systems.
4. HVAC Systems: Employed in heating, ventilation, and air conditioning systems.
5. Lighting: Used in electronic ballasts and lighting controls.
These applications benefit from the IGBT's fast switching capabilities and high efficiency.

Package

The BSC190N12NS3 G is a power MOSFET, and it typically comes in a TO-263 package type, which is also known as D2PAK. This surface-mount package is commonly used for high power devices due to its ability to dissipate heat efficiently.

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