FDC633N

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FDC633N

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MOSFET N-CH 30V 5.2A SUPERSOT6

  • メーカーオンセミコンダクター社

  • メーカー品番 #FDC633N

  • データシート FDC633N DataSheet

  • 在庫状況11625

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仕様

属性
Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 5.2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 42mOhm @ 5.2A, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 16 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 538 pF @ 10 V
PowerDissipation(Max) 1.6W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SuperSOT™-6

概要

Description

FDC633N refers to a specific course or module, likely within a specialized field such as finance, development, or computing, although the exact domain is not specified in your query. An introduction to such a course would typically cover the basic objectives, key topics, and skills students are expected to learn. These might include foundational concepts relevant to the course's subject area, methodologies, tools, and practical applications. The course may also outline prerequisites or recommended knowledge to ensure students are adequately prepared. Additionally, the introduction could highlight the importance of the course within the broader curriculum, its relevance to industry practices, and potential career pathways for students. To gain a better understanding of FDC633N, consulting the course syllabus or academic catalog of the institution offering it would provide detailed information tailored to the specific educational context.

Equivalent

The FDC633N is a dual N-channel MOSFET. Equivalent products include:
1. Vishay Si6926DQ
2. ON Semiconductor NTD4906N
3. Fairchild FDN339AN
4. Diodes Incorporated DMN6040SSD
These components share similar electrical characteristics and package types, suitable for applications involving power management and load switching. Always verify datasheets to ensure compatibility with specific requirements.

Features

The FDC633N is a dual N-channel MOSFET designed for low voltage applications. It features include:
1. Dual N-Channel Configuration: Offers two N-channel MOSFETs within a single package, ideal for compact and space-saving designs.
2. Low On-Resistance: Typically low R_DS(on) values, which contribute to efficient power switching and less power loss, enhancing overall performance.
3. Low Voltage Operation: Suitable for low voltage applications, often used in portable electronics where efficiency is crucial.
4. Fast Switching Speed: Provides quick response times, beneficial for applications requiring high-speed switching.
5. SOIC Package: Usually comes in a small-outline integrated circuit package, facilitating easy integration into various electronics projects and designs.
6. Thermal Efficiency: Designed to effectively dissipate heat, helping maintain performance and reliability.
7. Protection Features: May include ESD protection and other safety measures to prevent damage due to electrical overstress.
These features make the FDC633N suitable for applications such as DC-DC converters, motor drivers, and power management systems in portable devices.

Pinout

The FDC633N is a P-channel MOSFET. It typically comes in a small SOT-23 package, which is a 3-pin configuration. The functions of these pins are generally as follows:
1. Gate: This pin receives the input voltage to control the MOSFET's operation, turning the device on or off.
2. Drain: This is the pin through which the current flows when the MOSFET is in the 'on' state. It connects to the load that the MOSFET will switch.
3. Source: This pin is typically connected to the negative side of the power supply (for a P-channel MOSFET), and it serves as the return path for current when the MOSFET is conducting.
The FDC633N is used for switching and amplifying electronic signals in various applications, including power management and load switching in portable devices due to its low power consumption and compact size.

Manufacturer

The FDC633N is a component originally manufactured by Fairchild Semiconductor. Fairchild was a semiconductor company that produced a variety of electronic components, including transistors, diodes, and integrated circuits. Known for its role in the development of the semiconductor industry, Fairchild was a pioneer in the production of silicon transistors and other semiconductor devices.
Fairchild Semiconductor was founded in 1957 and became one of the key players in the early growth of Silicon Valley. The company contributed significantly to the advancement of semiconductor technology and played a crucial role in the development of the integrated circuit.
In 2016, Fairchild Semiconductor was acquired by ON Semiconductor (now known as onsemi), a company that also operates in the semiconductor industry. onsemi focuses on energy-efficient electronics, providing a range of products such as sensors, power management solutions, and connectivity components for various applications including automotive, industrial, and communications.
Thus, the FDC633N, initially a Fairchild product, is now part of onsemi's portfolio following the acquisition.

Application

The FDC633N is a dual N-channel MOSFET commonly used in various applications. Its primary application areas include:
1. Power Management: Utilized in DC-DC converters for efficient power regulation.
2. Load Switching: Acts as a switch to control power delivery in various electronic devices.
3. Motor Control: Helps drive motors by switching current on and off efficiently.
4. Battery Protection: Used in circuits to prevent over-current and over-voltage conditions.
5. LED Drivers: Controls the power supplied to LEDs, ensuring consistent brightness.
6. Signal Switching: Operates in analog and digital signal switching applications.
These applications leverage its low on-resistance and fast switching capabilities.

Package

The FDC633N is a MOSFET transistor, and it is typically available in a SuperSOT-6 package, which is a small surface-mount package designed for efficient power handling and space-saving on printed circuit boards.

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