FDS6675BZ

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FDS6675BZ

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MOSFET P-CH 30V 11A 8SOIC

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  • メーカー品番 #FDS6675BZ

  • データシート FDS6675BZ DataSheet

  • パッケージ SOIC-8

  • 在庫状況1384

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仕様

属性
Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 11A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 13mOhm @ 11A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 62 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2470 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

概要

Description

The FDS6675BZ is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification applications. It is part of the Fairchild Semiconductor product line, which is now under ON Semiconductor. This particular MOSFET is designed for low voltage applications, offering a low on-state resistance, which translates to higher efficiency and reduced power loss.
Key features of the FDS6675BZ include its low RDS(on) value, making it suitable for applications that require minimal conduction losses. It typically operates at a voltage of around 30V and can handle a current up to 12A. The device is housed in a compact and thermally efficient package, which is ideal for designs where space is a constraint.
The FDS6675BZ is often utilized in DC-DC converters, power management systems, and as a load switch in various electronic devices. Its reliability and efficiency make it a popular choice in consumer electronics, automotive, and industrial applications.

Equivalent

The FDS6675BZ is a power MOSFET used for switching applications. Equivalent products or alternatives may include NXP's PHK19NQ10T, ON Semiconductor's NTMFS4C05N, or Vishay's SiR424DP. When looking for equivalents, ensure that the parameters such as voltage, current rating, Rds(on), and package type match to ensure compatibility with your application. Always consult datasheets for precise matching.

Features

The FDS6675BZ is a N-channel power MOSFET, known for its efficient performance in power management applications. Key features include:
1. Low On-Resistance: It offers low R_DS(on), ensuring minimal power loss and efficient current conduction.
2. High-Speed Switching: The MOSFET supports high-speed switching, enhancing performance in applications requiring fast response times.
3. Advanced Package: It is housed in a compact and thermally efficient package, often a SuperSOT-6, which saves space on PCBs and improves thermal management.
4. Robust Design: With a design that withstands significant voltage and current levels, it provides reliable performance in demanding environments.
5. Applications: Commonly used in DC-DC converters, power supply modules, and motor control circuits.
6. Thermal Performance: Efficient heat dissipation capabilities enable it to handle high-power operations without overheating.
These features make the FDS6675BZ suitable for a wide range of power electronics applications where efficiency and reliability are crucial.

Pinout

The FDS6675BZ is a PowerTrench MOSFET designed by Fairchild Semiconductor, now part of ON Semiconductor. It is a single N-channel MOSFET typically used for switching and amplification applications in electronic circuits. The package type for the FDS6675BZ is a SuperSOT-6, which is a 6-pin configuration.
Here's a concise breakdown of the pin functions:
1. Pin 1 (G): Gate - This pin controls the MOSFET's switching operation by applying voltage to it.
2. Pin 2 (S): Source - One of the terminals for the flow of current. In N-channel MOSFETs, the source is typically connected to the lower potential.
3. Pin 3 (S): Source - This pin is internally connected to Pin 2.
4. Pin 4 (D): Drain - The terminal through which current flows out of the MOSFET when it is on.
5. Pin 5 (D): Drain - This pin is internally connected to Pin 4.
6. Pin 6 (D): Drain - This pin is internally connected to Pins 4 and 5.
This MOSFET is used in applications requiring efficient power management, providing fast switching and low ON resistance.

Manufacturer

The FDS6675BZ is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor components including power and signal management, logic, discrete, and custom devices. These components are used in various applications across different industries, including automotive, industrial, cloud power, and Internet of Things (IoT). The company focuses on energy-efficient innovations, contributing to the development of smart technology solutions.

Application

The FDS6675BZ is an N-channel MOSFET commonly used in power management applications. Its key application areas include:
1. DC-DC Converters: Utilized for efficient voltage regulation and conversion in portable devices.
2. Battery Management: Helps in charging and discharging control in battery-operated equipment.
3. Switching Power Supplies: Used in switching regulators to enhance energy efficiency.
4. Load Switches: Acts as an electronically controlled switch for turning loads on and off.
5. Motor Control: Used in controlling small motors in applications like drones and robotics.
6. LED Drivers: Supports power control for LED lighting systems.
These applications benefit from its low on-resistance and fast switching characteristics.

Package

The FDS6675BZ is a MOSFET transistor, and its package type is an SO-8 (Small Outline-8) surface-mount package. This package is compact, suitable for efficient surface mounting on printed circuit boards, and is commonly used in applications requiring efficient power management.

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