仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 9.4A |
| Rds On(Max) @ Id Vgs | 14mOhm @ 9.4A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 23nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 1821pF @ 10V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
"Introduction to FDS6898A" likely refers to an advanced semiconductor device, such as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), commonly used in power electronics. The FDS6898A is a dual N-channel MOSFET, optimized for high-efficiency switching applications like DC-DC converters, motor drives, and power management systems.
Key features include:
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing power loss.
- Fast Switching Speed: Suitable for high-frequency applications.
- Compact Package (e.g., SO-8): Saves board space.
- Low Gate Charge: Reduces drive requirements.
Typical applications involve load switching, battery protection, and synchronous rectification. For precise details, consult the datasheet from the manufacturer (e.g., ON Semiconductor or Fairchild).
Key features include:
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing power loss.
- Fast Switching Speed: Suitable for high-frequency applications.
- Compact Package (e.g., SO-8): Saves board space.
- Low Gate Charge: Reduces drive requirements.
Typical applications involve load switching, battery protection, and synchronous rectification. For precise details, consult the datasheet from the manufacturer (e.g., ON Semiconductor or Fairchild).
Features
The FDS6898A is an N-channel PowerTrench MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 9.5mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Low Gate Charge (Qg): 18nC (typical) for reduced switching losses
- Avalanche Energy Rated: Enhances reliability in inductive load applications
- Package: SOIC-8 (compact and space-saving)
- Applications: DC-DC converters, motor control, power management
This MOSFET is designed for high-performance, low-loss switching in power electronics.
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 9.5mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Low Gate Charge (Qg): 18nC (typical) for reduced switching losses
- Avalanche Energy Rated: Enhances reliability in inductive load applications
- Package: SOIC-8 (compact and space-saving)
- Applications: DC-DC converters, motor control, power management
This MOSFET is designed for high-performance, low-loss switching in power electronics.
Manufacturer
The FDS6898A is a dual N-channel PowerTrench MOSFET manufactured by ON Semiconductor (now part of onsemi after rebranding in 2021).
ON Semiconductor is a global leader in power management, analog, and sensor technologies, serving industries like automotive, industrial, and consumer electronics. Known for high-efficiency power solutions, the company focuses on energy-efficient innovations.
The FDS6898A is designed for high-performance switching applications, offering low on-resistance and fast switching speeds.
ON Semiconductor is a global leader in power management, analog, and sensor technologies, serving industries like automotive, industrial, and consumer electronics. Known for high-efficiency power solutions, the company focuses on energy-efficient innovations.
The FDS6898A is designed for high-performance switching applications, offering low on-resistance and fast switching speeds.
Application
The FDS6898A is a dual N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – H-bridge circuits, driver stages.
4. Portable Electronics – Smartphones, tablets (efficient power handling).
5. Automotive Systems – LED drivers, infotainment power circuits.
Its low on-resistance (RDS(on)) and compact SOIC-8 package make it ideal for space-constrained, high-efficiency applications.
1. Power Management – DC-DC converters, voltage regulators.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – H-bridge circuits, driver stages.
4. Portable Electronics – Smartphones, tablets (efficient power handling).
5. Automotive Systems – LED drivers, infotainment power circuits.
Its low on-resistance (RDS(on)) and compact SOIC-8 package make it ideal for space-constrained, high-efficiency applications.
Package
The FDS6898A is a dual N-channel MOSFET available in an SO-8 (SOIC-8) package. This surface-mount package is compact, measuring approximately 5mm x 6mm, and is commonly used for power management applications. It features low on-resistance and high efficiency, making it suitable for switching circuits. The SO-8 package ensures easy PCB integration and good thermal performance.
