仕様
| 属性 | 値 |
| Package | Tube |
| ProductStatus | Active |
| IGBTType | Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
| Current-Collector(Ic)(Max) | 120 A |
| Current-CollectorPulsed(Icm) | 180 A |
| Vce(on)(Max)@VgeIc | 2.5V @ 15V, 60A |
| Power-Max | 600 W |
| SwitchingEnergy | 1.54mJ (on), 450µJ (off) |
| InputType | Standard |
| GateCharge | 189 nC |
| Td(on/off)@25°C | 18ns/104ns |
| TestCondition | 400V, 60A, 3Ohm, 15V |
| ReverseRecoveryTime(trr) | 47 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-3P-3, SC-65-3 |
概要
Description
The FGA60N65SMD is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications. It is part of the NPT (Non-Punch Through) IGBT family, known for its robust performance and efficiency in power electronics. Operating at a voltage rating of 650V and a current rating of 60A, this IGBT is suitable for medium to high power applications such as motor drives, inverters, and power supplies.
Key features include low saturation voltage, fast switching capabilities, and high input impedance, which make it ideal for reducing power loss and enhancing overall system efficiency. The device is housed in a surface-mount package, which aids in compact circuit design and thermal management. Additionally, its rugged construction provides reliability in demanding environments.
Overall, the FGA60N65SMD combines the benefits of fast switching speeds and low conduction losses, making it a popular choice for engineers seeking a balance of performance and efficiency in their power management solutions.
Key features include low saturation voltage, fast switching capabilities, and high input impedance, which make it ideal for reducing power loss and enhancing overall system efficiency. The device is housed in a surface-mount package, which aids in compact circuit design and thermal management. Additionally, its rugged construction provides reliability in demanding environments.
Overall, the FGA60N65SMD combines the benefits of fast switching speeds and low conduction losses, making it a popular choice for engineers seeking a balance of performance and efficiency in their power management solutions.
Equivalent
The FGA60N65SMD is a 650V, 60A N-channel IGBT. Equivalent products include:
1. Infineon IKP60N65EH5 - 650V, 60A IGBT with similar specifications.
2. STMicroelectronics STGW60H65DFB - 650V, 60A IGBT, featuring low saturation voltage.
3. ON Semiconductor FGH60N65SMD - Shares similar voltage and current ratings.
4. Toshiba GT60N321 - 650V, 60A IGBT suitable for similar applications.
Always verify electrical characteristics and package compatibility before substituting.
1. Infineon IKP60N65EH5 - 650V, 60A IGBT with similar specifications.
2. STMicroelectronics STGW60H65DFB - 650V, 60A IGBT, featuring low saturation voltage.
3. ON Semiconductor FGH60N65SMD - Shares similar voltage and current ratings.
4. Toshiba GT60N321 - 650V, 60A IGBT suitable for similar applications.
Always verify electrical characteristics and package compatibility before substituting.
Features
The FGA60N65SMD is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency electronic applications. Key features include:
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous collector current of 60A.
3. Low Saturation Voltage: Features a low VCE(sat), which ensures reduced power loss and higher efficiency.
4. Switching Speed: Optimized for fast switching, enhancing performance in applications like induction heating and motor drives.
5. Short Circuit Withstanding: Offers robust short-circuit capability, improving reliability and safety.
6. Soft Switching Characteristics: Helps reduce electromagnetic interference (EMI).
7. Thermal Performance: Superior thermal performance, allowing for better heat dissipation.
8. Compact Package: Available in surface-mount device (SMD) packaging, facilitating space-saving designs.
These features make the FGA60N65SMD suitable for use in a variety of power conversion and control systems, such as inverters, converters, and power supplies, where efficiency and reliability are critical.
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous collector current of 60A.
3. Low Saturation Voltage: Features a low VCE(sat), which ensures reduced power loss and higher efficiency.
4. Switching Speed: Optimized for fast switching, enhancing performance in applications like induction heating and motor drives.
5. Short Circuit Withstanding: Offers robust short-circuit capability, improving reliability and safety.
6. Soft Switching Characteristics: Helps reduce electromagnetic interference (EMI).
7. Thermal Performance: Superior thermal performance, allowing for better heat dissipation.
8. Compact Package: Available in surface-mount device (SMD) packaging, facilitating space-saving designs.
These features make the FGA60N65SMD suitable for use in a variety of power conversion and control systems, such as inverters, converters, and power supplies, where efficiency and reliability are critical.
Pinout
The FGA60N65SMD is an Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. It is encapsulated in a TO-3P package. The device features a total of three pins:
1. Collector (C): This is the main terminal for the IGBT where the current enters the device. It is connected to the load and the positive voltage supply in the circuit.
2. Emitter (E): This terminal is usually connected to the ground or the negative voltage supply. It represents the output of the IGBT where the current exits.
3. Gate (G): This pin controls the switching of the IGBT. By applying a voltage to the gate, it allows current to flow between the collector and emitter, effectively turning the transistor on or off.
The FGA60N65SMD is typically used in applications requiring efficient and fast power switching, such as motor drives, power inverters, and industrial power supplies.
1. Collector (C): This is the main terminal for the IGBT where the current enters the device. It is connected to the load and the positive voltage supply in the circuit.
2. Emitter (E): This terminal is usually connected to the ground or the negative voltage supply. It represents the output of the IGBT where the current exits.
3. Gate (G): This pin controls the switching of the IGBT. By applying a voltage to the gate, it allows current to flow between the collector and emitter, effectively turning the transistor on or off.
The FGA60N65SMD is typically used in applications requiring efficient and fast power switching, such as motor drives, power inverters, and industrial power supplies.
Manufacturer
The FGA60N65SMD is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a company that specializes in semiconductor manufacturing. They produce a wide range of products such as power and signal management, logic, discrete, and custom devices for various applications in automotive, industrial, cloud, and IoT sectors. They are known for providing energy-efficient innovations, helping to reduce global energy use.
Application
The FGA60N65SMD, a 650V N-channel IGBT (Insulated Gate Bipolar Transistor), is commonly used in various applications requiring efficient power switching. Key application areas include:
1. Power Supply Systems: Used in switch-mode power supplies (SMPS) for improved energy efficiency.
2. Motor Drives: Suitable for variable speed drives in industrial and consumer applications.
3. Inverters: Utilized in renewable energy systems like solar inverters for converting DC to AC.
4. Uninterruptible Power Supplies (UPS): Enhances reliability and performance.
5. Welding Equipment: Provides efficient power control in welding applications.
Its low conduction losses and high-speed switching capabilities make it ideal for these high-power and high-efficiency applications.
1. Power Supply Systems: Used in switch-mode power supplies (SMPS) for improved energy efficiency.
2. Motor Drives: Suitable for variable speed drives in industrial and consumer applications.
3. Inverters: Utilized in renewable energy systems like solar inverters for converting DC to AC.
4. Uninterruptible Power Supplies (UPS): Enhances reliability and performance.
5. Welding Equipment: Provides efficient power control in welding applications.
Its low conduction losses and high-speed switching capabilities make it ideal for these high-power and high-efficiency applications.
Package
The FGA60N65SMD is an IGBT (Insulated Gate Bipolar Transistor) that comes in a TO-247 package. This package type is designed for high-power applications, providing efficient thermal management and easy mounting on printed circuit boards.
