FGH60N60SFDTU

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FGH60N60SFDTU

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IGBT FIELD STOP 600V 120A TO247

  • メーカーオンセミコンダクター社

  • メーカー品番 #FGH60N60SFDTU

  • パッケージ TO-247AB-3

  • 在庫状況3091

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Package Tube
ProductStatus Active
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 120 A
Current-CollectorPulsed(Icm) 180 A
Vce(on)(Max)@VgeIc 2.9V @ 15V, 60A
Power-Max 378 W
SwitchingEnergy 1.79mJ (on), 670µJ (off)
InputType Standard
GateCharge 198 nC
Td(on/off)@25°C 22ns/134ns
TestCondition 400V, 60A, 5Ohm, 15V
ReverseRecoveryTime(trr) 47 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

概要

Description

The FGH60N60SFDTU is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. It features a maximum collector current of 60A and a voltage rating of 600V, making it suitable for use in a range of industrial and consumer electronics where efficient power management is critical. The device combines the attributes of both MOSFETs and BJTs, offering high input impedance and fast switching capabilities.
This particular IGBT model is often used in power inverters, motor drives, and induction heating due to its low conduction and switching losses. The "SF" in its designation typically refers to a soft fast recovery diode, which enhances its performance in applications requiring smooth switching.
Compacted in a TO-247 package, the FGH60N60SFDTU offers excellent thermal performance and high reliability, making it a preferred choice in robust power electronics. Moreover, its ease of driving and control contributes to its widespread adoption in energy-efficient power conversion systems.

Equivalent

The FGH60N60SFDTU is a 600V, 60A N-channel IGBT. Equivalent products include:
1. STMicroelectronics STGW60H60DFB - 600V, 60A IGBT.
2. Infineon IGW60N60H3 - 600V, 60A IGBT.
3. ON Semiconductor FGH60N60SFD - Similar specifications as the original.
4. Fairchild FGA60N60SMD - 600V, 60A IGBT.
Always verify specifications and pin compatibility when replacing components.

Features

The FGH60N60SFDTU is an Insulated Gate Bipolar Transistor (IGBT) known for its efficient performance in high-power applications. Here are its key features:
1. Voltage and Current Ratings: It has a collector-emitter voltage of 600V and a continuous collector current rating of 60A, making it suitable for high-voltage operations.

2. Low Saturation Voltage: The device features a low V_CE(sat), which improves efficiency by minimizing power loss.
3. High-Speed Switching: The FGH60N60SFDTU is designed to offer fast switching capabilities, ideal for applications requiring quick transitions.
4. Soft Fast Recovery Diode: Integrated with a fast recovery diode that reduces switching losses and enhances thermal performance.
5. Robust Design: It features a rugged construction that enhances reliability in demanding environments.
6. Applications: Commonly used in applications such as motor drives, power inverters, and induction heating.
7. Package: Available in a TO-247 package, which provides good thermal management and ease of mounting in circuits.
These features make the FGH60N60SFDTU suitable for a variety of industrial applications where high efficiency and reliable performance are critical.

Pinout

The FGH60N60SFDTU is an IGBT (Insulated Gate Bipolar Transistor) that comes in a TO-247 package. It typically has a 3-pin configuration:
1. Collector (C): This is the main terminal for current flow into the device when it is in the conducting state. It is connected to the load in a circuit.

2. Gate (G): This terminal controls the switching operation of the IGBT. A voltage applied to the gate allows current to flow from the collector to the emitter by turning the device on.
3. Emitter (E): This is the terminal through which the current exits the IGBT when it is switched on, completing the circuit.
The FGH60N60SFDTU is designed for high efficiency and fast switching, making it suitable for applications such as induction heating, motor drives, and other high-power switching applications.

Manufacturer

The FGH60N60SFDTU is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor solutions. These include power and signal management, logic, discrete, and custom devices for various industries such as automotive, industrial, communications, computing, and consumer electronics. Onsemi focuses on innovative, energy-efficient solutions that support sustainable ecosystems.

Application

The FGH60N60SFDTU is an Insulated Gate Bipolar Transistor (IGBT) used primarily in power electronics applications. Key application areas include motor drives, inverters, and power supply systems. It is often utilized in industrial motor control systems, renewable energy inverters, and uninterruptible power supplies (UPS). Additionally, it is suitable for use in high-frequency switching applications due to its fast switching capabilities, making it a good choice for induction heating systems and welding equipment. Its high efficiency and robust performance make it ideal for applications requiring efficient power conversion and management.

Package

The FGH60N60SFDTU is typically housed in a TO-247 package, which is a type of through-hole power package commonly used for high-power transistors and diodes. This package offers efficient thermal performance and is suitable for applications requiring high current and voltage.

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