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IRF1010ZPBF
+BOMMOSFET N-CH 55V 75A TO220AB
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF1010ZPBF
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データシート IRF1010ZPBF DataSheet
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在庫状況8942
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRF1010 |
概要
Description
The IRF1010ZPBF is packaged in a TO-220 format, allowing for easy heat dissipation. Its gate threshold voltage (V_GS(th)) typically ranges between 2V to 4V, meaning it can be driven effectively with low-voltage logic levels. This MOSFET also offers fast switching speeds, which are essential for efficient operation in high-frequency applications.
Additionally, the "PBF" designation indicates that the component is lead-free, complying with RoHS standards for environmental safety. Overall, the IRF1010ZPBF is a reliable choice for engineers seeking efficient and effective power management solutions.
Equivalent
Features
- Voltage Rating: 100V, suitable for high-voltage applications.
- Current Rating: Continuous drain current of up to 60A, allowing for handling significant load.
- RDS(on): Low on-resistance (typically around 0.08Ω at VGS=10V), which minimizes conduction losses.
- Gate Threshold Voltage (VGS(th)): Typically between 2-4V, making it easy to drive with standard logic levels.
- Package: Available in a TO-220 package for effective heat dissipation.
- Fast Switching Speed: Ideal for high-frequency applications, enhancing efficiency.
- Thermal Resistance: Excellent thermal performance due to low thermal resistance.
These features make the IRF1010ZPBF suitable for various applications, including power supplies, motor control, and automotive systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage greater than the threshold voltage turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for the current flowing through the MOSFET.
The IRF1010ZPBF is commonly used in switching applications and can handle significant voltage and current levels, making it suitable for various power management tasks in electronic circuits.