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IRF530NS
+BOMMOSFET N-CH 100V 17A D2PAK
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF530NS
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データシート IRF530NS DataSheet
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在庫状況6318
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | HEXFET® |
| PartStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 90mOhm @ 9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 37 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 920 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 70W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
| Package/Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
概要
Description
The IRF530NS is an N-channel MOSFET primarily used in power applications due to its high efficiency and fast switching capabilities. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 9.2A at a temperature of 25°C. The MOSFET has a low on-resistance (R_DS(on)) of around 0.4 ohms, which minimizes power losses during operation.
The IRF530NS is commonly utilized in switching power supplies, motor control circuits, and other applications requiring efficient power management. Its gate threshold voltage ranges from 2V to 4V, making it suitable for logic-level driving.
The device is typically housed in a TO-220 package, allowing for easy heat dissipation. When designing circuits with the IRF530NS, it is essential to consider appropriate gate drive methods and thermal management to ensure reliable operation. Overall, the IRF530NS is a versatile component in the field of electronics and power engineering.
The IRF530NS is commonly utilized in switching power supplies, motor control circuits, and other applications requiring efficient power management. Its gate threshold voltage ranges from 2V to 4V, making it suitable for logic-level driving.
The device is typically housed in a TO-220 package, allowing for easy heat dissipation. When designing circuits with the IRF530NS, it is essential to consider appropriate gate drive methods and thermal management to ensure reliable operation. Overall, the IRF530NS is a versatile component in the field of electronics and power engineering.
Equivalent
The IRF530NS is an N-channel MOSFET. Equivalent products include the IRF540, IRF530, and IRFZ44N. Other close alternatives are the STP16NF06, BSS138, and FQP50N06. Ensure to check specifications like voltage, current rating, and R_DS(on) for compatibility in your application.
Features
The IRF530NS is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Handling: It can handle a continuous drain current (I_D) of up to 9.2A, enabling efficient power management.
3. Low On-Resistance: With a maximum on-resistance (R_DS(on)) of 0.4 ohms at a gate-source voltage (V_GS) of 10V, it allows for minimal power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 2V to 4V, facilitating easy drive from low-voltage logic levels.
5. Speed: It features fast switching capabilities, ideal for applications like motor drives, power supplies, and DC-DC converters.
6. Package: Typically available in TO-220 and DPAK packages for easy integration into circuits.
Overall, the IRF530NS combines high voltage, efficient current handling, and rapid switching, making it a reliable choice for various electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Handling: It can handle a continuous drain current (I_D) of up to 9.2A, enabling efficient power management.
3. Low On-Resistance: With a maximum on-resistance (R_DS(on)) of 0.4 ohms at a gate-source voltage (V_GS) of 10V, it allows for minimal power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 2V to 4V, facilitating easy drive from low-voltage logic levels.
5. Speed: It features fast switching capabilities, ideal for applications like motor drives, power supplies, and DC-DC converters.
6. Package: Typically available in TO-220 and DPAK packages for easy integration into circuits.
Overall, the IRF530NS combines high voltage, efficient current handling, and rapid switching, making it a reliable choice for various electronic applications.
Pinout
The IRF530NS is an N-channel MOSFET with a TO-220 package. It has three main pins:
1. Gate (G): This pin controls the switching action of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current enters the MOSFET. It is connected to the load in the circuit.
3. Source (S): This pin is the terminal through which the load current exits the MOSFET. It is typically connected to ground or a lower potential in the circuit.
The IRF530NS is designed for high-voltage and high-current applications, with a maximum drain-source voltage of 100V and a continuous drain current rating of 9.2A. It is commonly used in switching power supplies, motor control, and other applications requiring efficient power switching.
1. Gate (G): This pin controls the switching action of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current enters the MOSFET. It is connected to the load in the circuit.
3. Source (S): This pin is the terminal through which the load current exits the MOSFET. It is typically connected to ground or a lower potential in the circuit.
The IRF530NS is designed for high-voltage and high-current applications, with a maximum drain-source voltage of 100V and a continuous drain current rating of 9.2A. It is commonly used in switching power supplies, motor control, and other applications requiring efficient power switching.
Manufacturer
The IRF530NS is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon is known for its focus on automotive, industrial power control, and digital security solutions. The company provides a wide range of products, including power semiconductors, microcontrollers, and sensors, serving various markets such as automotive, industrial, and consumer applications. Infineon is recognized for its commitment to innovation and sustainability, aiming to develop technologies that contribute to energy efficiency and environmental protection. The IRF530NS itself is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power switching applications due to its high efficiency and fast switching capabilities.
Application
The IRF530NS is an N-channel MOSFET widely used in various applications due to its high voltage and current handling capabilities. Key application areas include:
1. Power Switching: Used in power supplies for efficient switching.
2. Motor Control: Drives electric motors in robotics and automation.
3. Amplifier Circuits: Acts as a switch in audio and RF amplification.
4. DC-DC Converters: Utilized in buck and boost converter designs.
5. LED Drivers: Controls current for LED lighting systems.
6. General Purpose Switching: Suitable for various electronic control applications.
Its fast switching speed and robust performance make it ideal for these uses.
1. Power Switching: Used in power supplies for efficient switching.
2. Motor Control: Drives electric motors in robotics and automation.
3. Amplifier Circuits: Acts as a switch in audio and RF amplification.
4. DC-DC Converters: Utilized in buck and boost converter designs.
5. LED Drivers: Controls current for LED lighting systems.
6. General Purpose Switching: Suitable for various electronic control applications.
Its fast switching speed and robust performance make it ideal for these uses.
Package
The IRF530NS is typically packaged in a TO-220 casing, which is commonly used for power MOSFETs. This package type allows for efficient heat dissipation and is suitable for various applications in power electronics.
