IRF640

画像は参考用です

IRF640

+BOM

MOSFET N-CH 200V 18A TO220AB

  • メーカーRFE/フューゼテック

  • メーカー品番 #IRF640

  • データシート IRF640 DataSheet

  • パッケージ TO-220-3

  • 在庫状況4912

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性 値
Package Tube
Series MESH OVERLAY™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 180mOhm @ 9A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 72 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1560 pF @ 25 V
PowerDissipation(Max) 125W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

概要

Description

The IRF640 is an N-channel power MOSFET designed for high-speed switching and amplification applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 18A (continuous)
- Low On-Resistance (RDS(on)): 0.15Ω (typical)
- Fast Switching Speed: Suitable for PWM, motor control, and power supplies
- Package: TO-220 (easy to mount with heatsinks)
Commonly used in DC-DC converters, inverters, and motor drivers, the IRF640 offers robust performance in medium-power circuits. Ensure proper gate drive (10V recommended) for optimal efficiency.

Equivalent

Equivalent products to the IRF640 (N-channel MOSFET, 200V, 18A, 0.18Ω) include:
- IRF740 (400V, 10A, 0.55Ω)
- IRF840 (500V, 8A, 0.85Ω)
- STP16NF06 (60V, 16A, 0.08Ω)
- FQP20N60 (600V, 20A, 0.28Ω)
- IXFH18N20 (200V, 18A, 0.18Ω)
Check datasheets for exact compatibility in your circuit.

Features

The IRF640 is an N-channel power MOSFET with the following key features:
- Voltage Rating: 200V drain-to-source (VDSS)
- Current Handling: 18A continuous drain current (ID)
- Low On-Resistance: 0.15Ω (typical) for efficient switching
- Fast Switching: Low gate charge (Qg ~ 72nC) and fast rise/fall times
- High Power Handling: Up to 125W power dissipation
- Gate Drive: 10V threshold (VGS(th)- Robustness: Avalanche energy rated for ruggedness
Commonly used in power supplies, motor control, and amplifiers due to its reliability and performance.

Application

The IRF640, an N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators and DC-DC converters.
2. Motor Control – Drives for brushed DC motors and solenoids.
3. Amplifiers – Audio and RF amplification circuits.
4. Relay/Driver Circuits – High-current switching applications.
5. Inverters – Converts DC to AC in UPS and solar systems.
With a 200V drain-source voltage and 18A current rating, it suits medium-power applications requiring efficient switching.

Package

The IRF640 is a power MOSFET available in the TO-220AB package. This through-hole package is widely used for its robustness, ease of mounting, and efficient heat dissipation. It features three leads (Gate, Drain, Source) and a metal tab for attaching a heatsink, making it suitable for high-power applications. The TO-220AB is a standard package for power transistors and voltage regulators.

IRF640に関連する製品

その他の比較

  • 迅速な見積もり

  • 見積もり依頼を送信 IRF640 このフォームをご利用ください。12時間以内にご返信いたします。