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IRF7317TRPBF
+BOMMOSFET N/P-CH 20V 8-SOIC
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF7317TRPBF
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データシート IRF7317TRPBF DataSheet
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パッケージ SOIC-8
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在庫状況2170
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 6.6A, 5.3A |
| Rds On(Max) @ Id Vgs | 29mOhm @ 6A, 4.5V |
| Vgs(th)(Max) @ Id | 700mV @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 27nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 900pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
Key Features:
- Voltage Ratings: 55V (N-channel) and -55V (P-channel).
- Current Ratings: 4.3A (N-channel) and -3.7A (P-channel).
- Low On-Resistance (RDS(on)): 85mΩ (N) and 140mΩ (P) at 10V.
- Logic-Level Gate Drive: Compatible with 4.5V drive.
- Applications: DC-DC converters, motor control, and load switching.
This MOSFET pair is ideal for synchronous buck converters and other bidirectional power circuits due to its complementary design. Its small footprint and efficient performance make it suitable for space-constrained designs.
Equivalent
- FDS6898A (Fairchild/ON Semi)
- SI4562DY (Vishay)
- DMN2019LSD (Diodes Inc.)
- NTTFS4C10N (ON Semi)
These alternatives offer similar specifications (e.g., voltage, current, package). Verify exact parameters for compatibility.
Features
- Voltage Ratings: 55V (N-channel) / -55V (P-channel)
- Current Ratings: 4.3A (N-channel) / -3.7A (P-channel)
- Low On-Resistance (RDS(on)): 50mΩ (N-channel) / 110mΩ (P-channel) at 10V
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Compatible with 4.5V drive (N-channel)
- Low Gate Charge: Enhances switching performance
- AEC-Q101 Qualified: Suitable for automotive applications
Ideal for DC-DC converters, motor control, and power management.
Pinout
Pin Functions (per channel pair):
1. Pins 1, 2, 3 (Source 1, Gate 1, Drain 1) – N-channel MOSFET.
2. Pins 5, 6, 7 (Drain 2, Gate 2, Source 2) – P-channel MOSFET.
3. Pins 4, 8 – Not connected (NC).
Key Features:
- VDS: ±20V (N/P-channel).
- ID: 4.3A (N-channel), -3.7A (P-channel).
- Logic-level gate drive.
Commonly used in synchronous buck converters and power management circuits.
Application
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – H-bridge circuits for small motors.
3. Load Switching – Efficient power distribution in portable devices.
4. Battery Protection – Reverse polarity and overcurrent protection.
5. Automotive Systems – LED drivers and infotainment power control.
Its compact SOIC-8 package and low on-resistance make it suitable for space-constrained, high-efficiency applications.
