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IRF7319TRPBF
+BOMMOSFET N/P-CH 30V 8SOIC
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF7319TRPBF
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データシート IRF7319TRPBF DataSheet
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パッケージ SO-8
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在庫状況7642
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On(Max) @ Id Vgs | 29mOhm @ 5.8A, 10V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 33nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 650pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
Key Features:
- Voltage Ratings: 30V (N-channel) and -30V (P-channel).
- Current Ratings: 5.3A (N-channel) and -4.5A (P-channel).
- Low On-Resistance (RDS(on)): 50mΩ (N-channel) and 80mΩ (P-channel).
- Logic-Level Gate Drive: Compatible with 4.5V drive.
Applications:
- DC-DC converters
- Motor control
- Power switching in portable devices
Advantages:
- High efficiency due to low RDS(on).
- Space-saving dual-MOSFET design.
- Suitable for battery-powered systems.
This MOSFET is ideal for compact, high-performance power circuits.
Equivalent
- FDS6898A (Fairchild/ON Semi)
- SI4562DY (Vishay)
- DMN2041L-7 (Diodes Inc.)
- NTTFS4C10N (ON Semi)
These alternatives offer similar specifications (e.g., voltage, current, package). Always verify datasheets for exact compatibility.
Features
- Voltage Ratings: 30V (N-channel) and -30V (P-channel).
- Current Ratings: 5.3A (N-channel) and -4.5A (P-channel).
- Low On-Resistance: 50mΩ (N-channel) and 80mΩ (P-channel) at 10V Vgs.
- Fast Switching: Optimized for high-efficiency power applications.
- Logic-Level Compatible: 4.5V gate drive (N-channel).
- Low Gate Charge: Enhances switching performance.
- Applications: Power management, DC-DC converters, motor control.
Ideal for space-constrained designs requiring complementary MOSFET pairs.
Pinout
Pin Functions (per channel):
- Pins 1, 2, 3 (N-Channel): Drain (D1), Gate (G1), Source (S1).
- Pins 5, 6, 7 (P-Channel): Source (S2), Gate (G2), Drain (D2).
- Pins 4, 8: Not connected (NC).
Key Features:
- VDS: ±20V (N/P-Channel).
- ID: 5.3A (N-Channel), -4.3A (P-Channel).
- Logic-level gate drive.
Used in power management, DC-DC converters, and motor control.
Manufacturer
Application
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – H-bridge circuits for small motors.
3. Load Switching – Efficient power switching in portable devices.
4. Battery Protection – Reverse polarity and overcurrent protection.
5. Automotive Systems – Electronic control units (ECUs), lighting.
Its compact SOIC-8 package and low on-resistance make it ideal for space-constrained, high-efficiency applications.
