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IRLML2244TRPBF
+BOMMOSFET P-CH 20V 4.3A SOT23
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRLML2244TRPBF
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データシート IRLML2244TRPBF DataSheet
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在庫状況3546
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | HEXFET® |
| PartStatus | Last Time Buy |
| BaseProductNumber | IRLML2244 |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 4.3A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@Id,Vgs | 54mOhm @ 4.3A, 4.5V |
| Vgs(th)(Max)@Id | 1.1V @ 10µA |
| GateCharge(Qg)(Max)@Vgs | 6.9 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 570 pF @ 16 V |
| PowerDissipation(Max) | 1.3W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro3™/SOT-23 |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概要
Description
- Voltage Rating: 20V (drain-to-source)
- Current Rating: 4.3A (continuous drain current)
- Low On-Resistance: 50mΩ (max at 4.5V gate drive)
- Logic-Level Gate: Fully enhanced at 2.5V, making it suitable for 3.3V/5V microcontrollers.
- Compact Package: SOT-23 (small footprint, ideal for space-constrained designs).
Common uses include power management, load switching, DC-DC converters, and battery-powered devices. Its low gate charge and fast switching speed enhance efficiency in high-frequency applications.
A cost-effective choice for low-power, portable electronics where space and energy efficiency are critical.
Equivalent
- SI2302DS (Vishay)
- DMN2004UFB4-7 (Diodes Inc.)
- BSS138 (Infineon, lower current)
- 2N7002 (Fairchild, similar specs)
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: 20V (VDSS)
- Current Rating: 4.3A (ID)
- Low On-Resistance: 50mΩ (RDS(on)) @ VGS = 4.5V
- Gate Threshold Voltage: 0.7V (VGS(th))
- Fast Switching: Low gate charge (Qg = 8nC)
- Package: SOT-23 (Compact surface-mount)
- Logic-Level Gate Drive: Fully enhanced at 2.5V (VGS)
- Low Power Loss: Optimized for efficiency in switching applications
Ideal for battery-powered circuits, load switching, and DC-DC converters due to its low RDS(on) and small footprint.
Manufacturer
The IRLML2244TRPBF is a N-channel MOSFET designed for low-voltage, high-efficiency applications like power switches and load management.
Application
1. Power Management – DC-DC converters, load switches.
2. Portable Electronics – Battery protection, power distribution in smartphones/tablets.
3. Automotive Systems – Low-voltage motor control, LED drivers.
4. Consumer Electronics – USB power switching, small motor drives.
5. IoT Devices – Efficient power switching in low-power applications.
Its low on-resistance (RDS(on)) and small SOT-23 package make it ideal for space-constrained, energy-efficient designs.
Package
Frequently Asked Questions
Q: What is the maximum continuous drain current for this P-Channel MOSFET?
A: The IRLML2244TRPBF can handle up to 4.3A at 25°C ambient temperature, suitable for low-power load switching.
Q: What gate voltage is needed to achieve the lowest Rds(on)?
A: For minimum on-resistance of 54mOhm, use a drive voltage of 4.5V. It can also be driven with 2.5V for lower gate signals.
Q: What is the maximum gate-source voltage this component can withstand?
A: The Vgs maximum rating is ±12V, requiring careful clamping to prevent gate oxide damage in high-voltage drive circuits.
Q: Is this MOSFET suitable for battery-powered portable applications?
A: Yes, with a low threshold voltage of 1.1V max and logic-level drive capability, it is ideal for low-voltage battery management and power distribution.
Q: What package does the IRLML2244TRPBF come in?
A: It is offered in a surface-mount Micro3/SOT-23 package, compatible with standard SOT-23-3 footprints for compact PCB designs.
Q: What is the maximum power dissipation of this device?
A: The maximum power dissipation is 1.3W at ambient temperature, requiring thermal management for high-current or continuous operation.
