K4A8G165WC-BIWE

K4A8G165WC-BIWE is a type of DRAM (Dynamic Random Access Memory) chip manufactured by Samsung. It belongs to the DDR3 (Double Data Rate 3) SDRAM family, specifically designed for high-performance applications including computers, servers, and other electronic devices.
Key specifications include a 1GB capacity, a 1600 MT/s (million transfers per second) data rate, and a 1.5V operating voltage, which ensures efficient power consumption. The chip typically comes in a 78-ball BGA (Ball Grid Array) package, facilitating easy integration into various printed circuit boards (PCBs).
This memory module is known for its reliability and performance, making it suitable for both consumer electronics and more intensive computing tasks. The K4A8G165WC-BIWE chip is often used in conjunction with other components in a system to enhance overall speed and efficiency. Understanding its specifications is crucial for engineers and developers when designing systems that require optimal memory performance.

The K4A8G165WC-BIWE chip is a 1GB DDR3 SDRAM memory module. Equivalent products include similar DDR3 chips with the same specifications, such as the Samsung K4B4G1646F-BI, Micron MT41J128M16HA-125, and Hynix HMT112S6CFR8C-PB. Always ensure compatibility with your specific application or device when selecting alternatives.

The K4A8G165WC-BIWE is a 1GB DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip produced by Samsung. Key features include:
1. Capacity: 1GB, suitable for a variety of applications like smartphones, tablets, and other devices.
2. Data Rate: Operates at DDR3-1600 speed, providing efficient data transfer rates.
3. Organization: Configured as 128Mx8, allowing for 8-bit data width.
4. Voltage: Functions at a low voltage of 1.5V, contributing to energy efficiency.
5. Package Type: Available in a compact FBGA (Fine Ball Grid Array) package, ideal for space-constrained environments.
6. Latency: Offers low latency, helping improve overall system performance.
7. Thermal Performance: Designed for improved thermal performance, enhancing reliability during operation.
These features make the K4A8G165WC-BIWE suitable for various consumer electronics applications, balancing performance, capacity, and energy efficiency.

The K4A8G165WC-BIWE is a 4GB DDR4 DRAM memory chip produced by Samsung. It has a pin count of 78 pins in a TFBGA (Thin Fine Ball Grid Array) package.
This memory chip operates at a voltage of 1.2V with a data rate of up to 2400 MT/s (megatransfers per second). Its primary functions include providing high-speed data storage and retrieval for various applications, including desktops, laptops, and servers. The chip features a 64-bit data width, allowing it to transfer 8 bytes of data per operation.
The K4A8G165WC-BIWE is designed to support various memory architectures and systems, ensuring compatibility with different platforms and applications.

The K4A8G165WC-BIWE is manufactured by Samsung Electronics, a global leader in semiconductor manufacturing and consumer electronics. Established in 1938 and headquartered in Suwon, South Korea, Samsung is one of the largest technology companies in the world, known for its diverse range of products including smartphones, televisions, home appliances, and memory chips.
In the semiconductor sector, Samsung is recognized as a top producer of DRAM (Dynamic Random-Access Memory) and NAND flash memory, holding a significant share of the global market. The K4A8G165WC-BIWE is a specific model of DRAM memory, often utilized in various electronic devices including computers, laptops, and mobile devices.
Samsung operates with a strong emphasis on innovation, investing heavily in research and development to advance technology and enhance the performance of their products. The company plays a crucial role in the advancement of electronics and computing, contributing to various industries with its cutting-edge technology.

The K4A8G165WC-BIWE is a 1GB DDR3 SDRAM memory chip primarily used in consumer electronics, mobile devices, and computing applications. Its application areas include smartphones, tablets, laptops, and other portable devices, providing efficient memory solutions for various tasks. Additionally, it can be used in embedded systems, gaming consoles, and network devices, enhancing performance in multitasking and power-sensitive environments.

The K4A8G165WC-BIWE is a DRAM memory chip packaged in a 78-ball, 4x4 mm FBGA (Fine Ball Grid Array) package. This type of packaging is commonly used for mobile and embedded memory applications due to its compact size and efficient thermal management.