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MJD45H11RLG
+BOMTRANS PNP 80V 8A DPAK
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メーカーオンセミコンダクター社
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メーカー品番 #MJD45H11RLG
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データシート MJD45H11RLG DataSheet
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パッケージ TO-252-3
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在庫状況10534
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 8 A |
| Voltage - Collector Emitter Breakdown(Max) | 80 V |
| Vce Saturation(Max) @ Ib Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff(Max) | 1µA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 40 @ 4A, 1V |
| Power - Max | 1.75 W |
| Frequency - Transition | 90MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
The term "MJD45H11RLG" appears to be a specific code or model number, potentially relating to a product, component, or technology. Without additional context, such as the industry or field it pertains to, providing a detailed introduction is challenging. However, model numbers like this are typically used in electronics, manufacturing, or engineering sectors to identify specific versions of products or components.
If this relates to a semiconductor device, such as a transistor or diode, MJD45H11RLG could specify characteristics like voltage rating, current capacity, or package type. In a broader sense, it might also represent a part in a larger system, where each alphanumeric segment conveys specific technical details crucial for engineers and technicians.
For an accurate introduction, consulting a datasheet or product specification document from the manufacturer or supplier would be essential. These documents provide comprehensive details regarding usage, specifications, and applications, ensuring proper understanding and utilization of the component.
If this relates to a semiconductor device, such as a transistor or diode, MJD45H11RLG could specify characteristics like voltage rating, current capacity, or package type. In a broader sense, it might also represent a part in a larger system, where each alphanumeric segment conveys specific technical details crucial for engineers and technicians.
For an accurate introduction, consulting a datasheet or product specification document from the manufacturer or supplier would be essential. These documents provide comprehensive details regarding usage, specifications, and applications, ensuring proper understanding and utilization of the component.
Equivalent
The MJD45H11RLG is a NPN power transistor. Equivalent products could include the TIP3055, BD911, or 2N3055 transistors, as they share similar current and voltage ratings. However, always verify specific parameters like current gain, power dissipation, and packaging to ensure compatibility in your application.
Features
The MJD45H11RLG is a bipolar junction transistor (BJT) known for its high power handling capabilities. Here are its key features:
1. Type: NPN power transistor.
2. Collector-Emitter Voltage (Vce): Typically around 450V, allowing it to handle high-voltage applications.
3. Collector Current (Ic): Rated for up to 10A, making it suitable for high current applications.
4. Power Dissipation: Capable of dissipating significant power, around 80W, which is suitable for high power operations.
5. Gain (hFE): Offers a gain range suitable for amplification purposes.
6. Package Type: Available in a TO-252 package, allowing for efficient heat dissipation and compact mounting.
7. Applications: Commonly used in power amplification, switching, and voltage regulation applications.
These features make the MJD45H11RLG a versatile choice for various electronic and industrial applications requiring reliable high-power performance.
1. Type: NPN power transistor.
2. Collector-Emitter Voltage (Vce): Typically around 450V, allowing it to handle high-voltage applications.
3. Collector Current (Ic): Rated for up to 10A, making it suitable for high current applications.
4. Power Dissipation: Capable of dissipating significant power, around 80W, which is suitable for high power operations.
5. Gain (hFE): Offers a gain range suitable for amplification purposes.
6. Package Type: Available in a TO-252 package, allowing for efficient heat dissipation and compact mounting.
7. Applications: Commonly used in power amplification, switching, and voltage regulation applications.
These features make the MJD45H11RLG a versatile choice for various electronic and industrial applications requiring reliable high-power performance.
Pinout
The MJD45H11RLG is a NPN bipolar junction transistor (BJT). It typically comes in a TO-252 package, which has three pins. The pin configuration and their functions are as follows:
1. Base (B): The base is the control terminal of the transistor. A small current or voltage applied to the base controls the larger current flow between the collector and emitter.
2. Collector (C): The collector is the terminal through which the main current flows from the collector to the emitter when the transistor is in the "on" state. It is connected to the load.
3. Emitter (E): The emitter is the terminal that releases the charge carriers (electrons in the case of NPN transistors) into the base. It is typically connected to the ground or a negative voltage supply.
The MJD45H11RLG is often used for switching and amplification purposes in various electronic applications, offering high current gain and efficiency.
1. Base (B): The base is the control terminal of the transistor. A small current or voltage applied to the base controls the larger current flow between the collector and emitter.
2. Collector (C): The collector is the terminal through which the main current flows from the collector to the emitter when the transistor is in the "on" state. It is connected to the load.
3. Emitter (E): The emitter is the terminal that releases the charge carriers (electrons in the case of NPN transistors) into the base. It is typically connected to the ground or a negative voltage supply.
The MJD45H11RLG is often used for switching and amplification purposes in various electronic applications, offering high current gain and efficiency.
Manufacturer
The MJD45H11RLG is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a semiconductor manufacturing company that specializes in intelligent power and sensing technologies. It provides a wide range of products and solutions for various applications, including automotive, industrial, cloud, and IoT. The company focuses on innovation and performance, aiming to provide energy-efficient and sustainable solutions.
Application
The MJD45H11RLG is a high-voltage NPN bipolar junction transistor (BJT) commonly used in various electronic applications. Its primary application areas include:
1. Power Amplifiers: Utilized in audio amplifiers and RF amplification for boosting signal strength.
2. Switching Circuits: Employed in high-speed switching applications, including power supplies and motor control.
3. Regulators: Functions in voltage regulation circuits to maintain stable voltage levels.
4. Inverter Circuits: Used in power inverter designs for efficient energy conversion.
5. Lighting Systems: Implemented in driving and controlling LED and other high-intensity lighting setups.
These applications benefit from the MJD45H11RLG's high current and voltage handling capabilities.
1. Power Amplifiers: Utilized in audio amplifiers and RF amplification for boosting signal strength.
2. Switching Circuits: Employed in high-speed switching applications, including power supplies and motor control.
3. Regulators: Functions in voltage regulation circuits to maintain stable voltage levels.
4. Inverter Circuits: Used in power inverter designs for efficient energy conversion.
5. Lighting Systems: Implemented in driving and controlling LED and other high-intensity lighting setups.
These applications benefit from the MJD45H11RLG's high current and voltage handling capabilities.
Package
The MJD45H11RLG is a TO-220 package type. TO-220 is a widely used package for power semiconductors, providing efficient heat dissipation and allowing for easy mounting on heat sinks.
