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MMBF4391LT1G
+BOMJFET N-CH 30V SOT23-3
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メーカーオンセミコンダクター社
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メーカー品番 #MMBF4391LT1G
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データシート MMBF4391LT1G DataSheet
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在庫状況9613
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 50 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 10 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 14pF @ 15V |
| Power - Max | 225 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | MMBF4391 |
| Resistance - RDS(On) | 30 Ohms |
概要
Description
The MMBF4391LT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low voltage applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 1.2A, making it suitable for various switching and amplification tasks in electronic circuits. The device is constructed using a low threshold voltage, which enables it to operate efficiently with lower gate voltages. Its fast switching capabilities and low on-resistance (R_DS(on)) contribute to minimal power loss, enhancing overall efficiency in power management applications.
The MMBF4391LT1G is commonly used in power supply circuits, motor drivers, and signal switching applications. It is packaged in a compact SOT-23 form factor, allowing for space-saving designs in modern electronics. Overall, the MMBF4391LT1G is an effective choice for designers seeking reliable performance in compact and efficient power applications.
The MMBF4391LT1G is commonly used in power supply circuits, motor drivers, and signal switching applications. It is packaged in a compact SOT-23 form factor, allowing for space-saving designs in modern electronics. Overall, the MMBF4391LT1G is an effective choice for designers seeking reliable performance in compact and efficient power applications.
Equivalent
The MMBF4391LT1G is a N-channel MOSFET. Equivalent products include the BS170, 2N7000, and 2N7002. Other alternatives may come from various manufacturers, such as the BSS138 or the Si2302. Always verify the specific characteristics such as voltage, current ratings, and package type to ensure compatibility for your application.
Features
The MMBF4391LT1G is an N-channel MOSFET that offers several key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 2.3A, allowing it to drive moderate loads effectively.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.5 ohms at a gate-source voltage (V_GS) of 10V, enhancing efficiency by reducing power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, enabling it to be driven efficiently with lower gate voltages.
5. Package: It comes in a compact SOT-23 package, facilitating integration in space-constrained designs.
6. Applications: Ideal for use in switching applications, amplifiers, and power management circuits.
These features make the MMBF4391LT1G suitable for various applications in consumer electronics and industrial devices.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 2.3A, allowing it to drive moderate loads effectively.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.5 ohms at a gate-source voltage (V_GS) of 10V, enhancing efficiency by reducing power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, enabling it to be driven efficiently with lower gate voltages.
5. Package: It comes in a compact SOT-23 package, facilitating integration in space-constrained designs.
6. Applications: Ideal for use in switching applications, amplifiers, and power management circuits.
These features make the MMBF4391LT1G suitable for various applications in consumer electronics and industrial devices.
Pinout
The MMBF4391LT1G is a N-channel MOSFET transistor with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): The control terminal used to turn the MOSFET on or off.
2. Drain (D): The terminal through which the current flows when the MOSFET is in the on state.
3. Source (S): The terminal connected to the ground or negative side of the circuit.
The MMBF4391LT1G is characterized by its low on-resistance and high-speed switching capabilities, making it suitable for various applications, including signal switching and low-voltage operations in electronic circuits.
1. Gate (G): The control terminal used to turn the MOSFET on or off.
2. Drain (D): The terminal through which the current flows when the MOSFET is in the on state.
3. Source (S): The terminal connected to the ground or negative side of the circuit.
The MMBF4391LT1G is characterized by its low on-resistance and high-speed switching capabilities, making it suitable for various applications, including signal switching and low-voltage operations in electronic circuits.
Manufacturer
The MMBF4391LT1G is manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, providing a wide range of products including sensors, power management, and analog devices. The company primarily serves various industries such as automotive, industrial, communications, and consumer electronics. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has established itself as a key player in the semiconductor industry, focusing on energy-efficient solutions and innovative technologies. Their product offerings include discrete semiconductors, integrated circuits (ICs), and system-on-chip (SoC) solutions, aimed at meeting the evolving needs of modern electronic applications.
Application
The MMBF4391LT1G is a N-channel MOSFET primarily used in low-voltage applications. Its application areas include:
1. Switching Regulators: Used in power management circuits for efficient switching.
2. Load Switching: Controls power to various loads in consumer electronics.
3. Signal Switching: Employed in RF and analog signal applications.
4. Amplifiers: Utilized in low-noise amplifier circuits.
5. Motor Drivers: Controls small motors in robotics and automation.
Its low on-resistance and fast switching capabilities make it suitable for high-frequency applications.
1. Switching Regulators: Used in power management circuits for efficient switching.
2. Load Switching: Controls power to various loads in consumer electronics.
3. Signal Switching: Employed in RF and analog signal applications.
4. Amplifiers: Utilized in low-noise amplifier circuits.
5. Motor Drivers: Controls small motors in robotics and automation.
Its low on-resistance and fast switching capabilities make it suitable for high-frequency applications.
Package
The MMBF4391LT1G is packaged in a small SOT-23 (Surface Mount) package. This package type is designed for space-saving applications while providing good thermal performance.
