仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 600 mA |
| Voltage - Collector Emitter Breakdown(Max) | 60 V |
| Vce Saturation(Max) @ Ib Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff(Max) | 10nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 150mA, 10V |
| Power - Max | 300 mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
The MMBT2907ALT1G is a PNP bipolar junction transistor (BJT) used for amplification and switching applications. It is a general-purpose transistor, often employed in low-power voltage amplification tasks. With a maximum current rating of 600 mA and a voltage rating of 60 V, it is suitable for moderate-power applications. The transistor is encapsulated in a compact SOT-23 package, making it ideal for space-constrained circuit designs.
Key features include a high DC current gain, which enhances its amplification capabilities, and a low saturation voltage, improving efficiency in switching applications. Its operating temperature range extends from -55°C to 150°C, ensuring reliability under various environmental conditions.
The MMBT2907ALT1G is frequently utilized in consumer electronics, automotive systems, and industrial control circuits. It is appreciated for its reliability and cost-effectiveness, making it a popular choice among engineers and designers for creating efficient analog circuits.
Key features include a high DC current gain, which enhances its amplification capabilities, and a low saturation voltage, improving efficiency in switching applications. Its operating temperature range extends from -55°C to 150°C, ensuring reliability under various environmental conditions.
The MMBT2907ALT1G is frequently utilized in consumer electronics, automotive systems, and industrial control circuits. It is appreciated for its reliability and cost-effectiveness, making it a popular choice among engineers and designers for creating efficient analog circuits.
Equivalent
The MMBT2907ALT1G is a PNP bipolar junction transistor. Equivalent products include the 2N2907, 2N2907A BC557, and BC327. These transistors have similar electrical characteristics and can be used as substitutes in various applications, although it is important to verify the specifications such as current rating, voltage, and packaging to ensure compatibility in your specific circuit.
Features
The MMBT2907ALT1G is a PNP bipolar junction transistor (BJT) commonly used for amplification and switching applications. Key features include:
1. Type and Configuration: PNP transistor in a TO-92 package, suitable for low to medium current applications.
2. Collector-Emitter Voltage (Vceo): Rated at 60V, indicating the maximum voltage it can withstand between collector and emitter when not conducting.
3. Collector Current (Ic): Maximum current rating of 600 mA, allowing it to drive moderate loads.
4. Power Dissipation: Capable of dissipating up to 625 mW, suitable for small to medium power applications.
5. Gain (hFE): High gain range, typically around 100 to 300, providing effective amplification.
6. Frequency: Transition frequency (fT) of approximately 200 MHz, indicating suitability for high-frequency applications.
7. Temperature Range: Operates effectively over a wide temperature range, enhancing reliability in diverse environments.
8. Package: Available in a SOT-23 surface-mount package for compact and space-saving designs.
These features make the MMBT2907ALT1G suitable for various electronic circuits, including amplifiers, signal processing, and switching tasks.
1. Type and Configuration: PNP transistor in a TO-92 package, suitable for low to medium current applications.
2. Collector-Emitter Voltage (Vceo): Rated at 60V, indicating the maximum voltage it can withstand between collector and emitter when not conducting.
3. Collector Current (Ic): Maximum current rating of 600 mA, allowing it to drive moderate loads.
4. Power Dissipation: Capable of dissipating up to 625 mW, suitable for small to medium power applications.
5. Gain (hFE): High gain range, typically around 100 to 300, providing effective amplification.
6. Frequency: Transition frequency (fT) of approximately 200 MHz, indicating suitability for high-frequency applications.
7. Temperature Range: Operates effectively over a wide temperature range, enhancing reliability in diverse environments.
8. Package: Available in a SOT-23 surface-mount package for compact and space-saving designs.
These features make the MMBT2907ALT1G suitable for various electronic circuits, including amplifiers, signal processing, and switching tasks.
Pinout
The MMBT2907ALT1G is a PNP Bipolar Junction Transistor (BJT) commonly used for general-purpose amplification and switching applications. It is housed in a SOT-23 package, which is a small surface-mount package with three pins. The pin configuration is as follows:
1. Pin 1 (Base): This is the control pin of the transistor. A small current applied to the base allows a larger current to flow between the collector and emitter.
2. Pin 2 (Emitter): This pin is connected to the negative side of the circuit in PNP transistors. It emits charge carriers into the base region.
3. Pin 3 (Collector): This is the output pin of the transistor. It is connected to the load and is the path through which the main current flows from the collector to the emitter when the transistor is in the "on" state.
This configuration allows the MMBT2907ALT1G to be used effectively in various electronic circuits for switching and amplification tasks.
1. Pin 1 (Base): This is the control pin of the transistor. A small current applied to the base allows a larger current to flow between the collector and emitter.
2. Pin 2 (Emitter): This pin is connected to the negative side of the circuit in PNP transistors. It emits charge carriers into the base region.
3. Pin 3 (Collector): This is the output pin of the transistor. It is connected to the load and is the path through which the main current flows from the collector to the emitter when the transistor is in the "on" state.
This configuration allows the MMBT2907ALT1G to be used effectively in various electronic circuits for switching and amplification tasks.
Manufacturer
The MMBT2907ALT1G is manufactured by ON Semiconductor, a company known for producing various semiconductor components. ON Semiconductor, now branded as onsemi, is a prominent player in the semiconductor industry. The company specializes in supplying a wide range of semiconductor solutions that include power and signal management, logic, discrete, and custom devices. These products are used in various sectors, such as automotive, industrial, communications, computing, and consumer electronics. Onsemi focuses on energy-efficient innovations, helping to make technology more energy-efficient across different applications.
Application
The MMBT2907ALT1G is a PNP bipolar junction transistor commonly used in various applications such as switching, amplification, and signal processing. It is suitable for low power, medium voltage operations, making it ideal for use in consumer electronics, communication devices, and power management systems. Additionally, this transistor can be found in automotive circuits, industrial control systems, and as a general-purpose component in hobbyist and educational projects. Its small size and reliability make it a versatile choice for designing compact and efficient electronic circuits.
Package
The MMBT2907ALT1G is a PNP bipolar junction transistor (BJT) packaged in a SOT-23 surface-mount package. This package type is commonly used for compact, high-density circuit board designs.
