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MT29F16G08ABCBBH1-12IT:B
+BOMIC FLASH 16GBIT PARALLEL 100VBGA
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メーカーマイクロンテクノロジー株式会社
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メーカー品番 #MT29F16G08ABCBBH1-12IT:B
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在庫状況2934
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 16Gbit |
| Memory Organization | 2G x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 83 MHz |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 100-VBGA |
| Supplier Device Package | 100-VBGA (12x18) |
| Base Product Number | MT29F16G08 |
概要
Description
Key features include a multi-level cell (MLC) architecture that enhances storage density and speed. It supports various NAND Flash protocols for easy integration into devices. The "12IT" designation indicates a page size of 12 MB and a specific temperature range suitable for industrial applications.
Additionally, the device is compliant with several industry standards, ensuring compatibility with a wide range of controllers and systems. It is commonly used in smartphones, tablets, and other consumer electronics, as well as in automotive and industrial applications due to its durability and performance.
Equivalent
Features
Key features include:
- Interface: Serial NAND interface with support for both asynchronous and synchronous operations.
- Page Size: Typically 8 KB, with 16 pages per block.
- Block Size: 128 KB, with multiple blocks available for organization.
- Read/Write Endurance: Designed for high endurance, typically supporting 3,000 to 10,000 program/erase cycles.
- Data Retention: Generally, offers data retention of 10 years or more.
- Temperature Range: Industrial temperature range (-40°C to +85°C) for robust performance.
This chip is ideal for applications such as mobile devices, consumer electronics, and other embedded systems requiring reliable storage solutions.
Pinout
### Pin Functions:
1. Data I/O Pins (DQ0-DQ7): 8 data lines for read/write operations.
2. Command Pins (CMD, CLE): Command and address input signals.
3. Address Pins (A0-A7): Address input for selecting pages or blocks.
4. Control Pins (RE, WE, CE, R/B): Control signals for read, write, chip enable, and ready/busy status.
5. VCC/VSS: Power and ground connections.
6. WP (Write Protect): Write protection control.
7. RB (Ready/Busy): Status indication of the device.
This device is designed for high-density storage applications, offering reliability and performance suitable for embedded systems.