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MT40A512M8SA-075:F

Name: MT40A512M8SA-075:F
Rating: 4.8 (15 reviews)

+BOM

IC DRAM 4GBIT PAR 78FBGA

メーカーマイクロンテクノロジー株式会社
メーカー品番 #MT40A512M8SA-075:F
在庫状況13278

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性	値
Part Status	Obsolete
Base Product Number	MT40A512M8
Digi Key Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR4
Memory Size	4Gbit
Memory Organization	512M x 8
Memory Interface	Parallel
Clock Frequency	1.333 GHz
Write Cycle Time - Word, Page	15ns
Voltage - Supply	1.14V ~ 1.26V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package / Case	78-TFBGA
Supplier Device Package	78-FBGA (7.5x11)
Packaging	Box
Access Time	19 ns

概要

Description

MT40A512M8SA-075:F is Micron’s MT40A512M8SA family DRAM device. It provides 512 Mb of memory in an x8 data path (512 Mb total per device). The -075 indicates a specific speed grade, and the -F suffix denotes Pb‑free (RoHS) packaging. It is a synchronous, high‑density DRAM designed for mobile/embedded and memory subsystem use, requiring a memory controller to manage timing, refresh, and commands. Electrical specs (voltage, timings) and exact interface (e.g., DDR generation) vary by revision; consult the Micron datasheet for precise operating conditions, timing parameters (CAS latency, tRC, etc.), and packaging. Typical applications include laptops, tablets, embedded systems, and other compact, low‑power memory needs.

Pinout

Pin count: 54 pins (typical TSOP-II package for MT40A512M8SA-075:F).
Function: Micron 512-Mbit, x8 DRAM (dynamic RAM) with a multiplexed address/data interface. It provides an 8-bit data bus (DQ[7:0]), along with standard DRAM control and address signals such as CS, RAS, CAS, WE, DQM, CK/CK#, and address lines A0–Ax. Used as a memory device in modules requiring a 8-bit wide DRAM.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- Company type: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND/NOR flash, and related solutions) for computing, mobile, cloud, and embedded markets.

Application

MT40A512M8SA-075:F is a 512-Mbit ×8 SDRAM device. Typical application areas:
- Embedded systems and consumer electronics (set-top boxes, digital TVs, Blu-ray players)
- Networking/telecommunications equipment (routers, switches, modems)
- Automotive and industrial electronics (instrument panels, controllers)
- Graphics, multimedia, DSP platforms, and game consoles
- FPGA/ASIC memory expansion and cache memory
- Other embedded memory applications requiring moderate-speed, small-form DRAM

Package

FBGA (Fine-pitch Ball Grid Array) package — specifically a 96-ball FBGA used for the MT40A512M8SA-075:F DDR3 device.

Frequently Asked Questions

Q: What is the memory capacity and organization of the MT40A512M8SA-075:F?
A: It is a 4Gbit DDR4 SDRAM organized as 512M x 8, using a parallel interface for data transfer.

Q: What is the maximum operating clock frequency for this DRAM?
A: The device supports a clock frequency of up to 1.333 GHz, enabling high-speed data processing.

Q: What are the voltage requirements for this component?
A: It requires a supply voltage range of 1.14V to 1.26V, compliant with DDR4 specifications.

Q: Does this part support surface mounting, and what is its package type?
A: Yes, it is designed for surface mounting and comes in a 78-TFBGA package (78-FBGA, 7.5x11mm).

Q: What is the access time, and write cycle time for this memory?
A: The access time is 19 ns, and the write cycle time (Word, Page) is 15 ns.

Q: What is the operating temperature range for this DDR4 SDRAM?
A: It operates reliably within a temperature range of 0°C to 95°C (TC), suitable for various environments.