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MT41J256M16HA-125:E

Name: MT41J256M16HA-125:E
Rating: 4.8 (15 reviews)

+BOM

IC DRAM 4GBIT PARALLEL 96FBGA

メーカーマイクロンテクノロジー株式会社
メーカー品番 #MT41J256M16HA-125:E
在庫状況2816

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性	値
Part Status	Obsolete
Base Product Number	MT41J256M16
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR3
Memory Size	4Gbit
Memory Organization	256M x 16
Memory Interface	Parallel
Clock Frequency	800 MHz
Voltage - Supply	1.425V ~ 1.575V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package	96-TFBGA
Supplier Device Package	96-FBGA (9x14)
Packaging	Tray
Access Time	13.75 ns

概要

Description

The MT41J256M16HA-125:E is a DRAM memory chip produced by Micron Technology. It belongs to the DDR3 SDRAM family, which is widely used in computing devices for efficient data processing and storage. This particular chip offers a density of 256 Megabits and is organized in a 16-bit configuration, making it suitable for high-performance applications that require fast data throughput.
The "125:E" in the product name signifies specific performance characteristics, such as the clock speed and CAS latency. It operates with a clock speed of up to 800 MHz (DDR3-1600) and typically has a CAS latency of 11 cycles, which balances speed and efficiency. The chip runs on a standard DDR3 voltage of 1.5V, optimizing power consumption.
In terms of packaging, it is available in a standard FBGA (Fine Ball Grid Array) package, which supports high-density mounting on motherboards. The MT41J256M16HA-125:E is often used in personal computers, servers, and other electronic devices requiring reliable and fast memory solutions. Its robust architecture ensures compatibility and performance in various systems.

Equivalent

The MT41J256M16HA-125:E is a DDR3 SDRAM chip. Equivalent products are those with similar specifications like the same memory density (4Gb), organization (256M x 16), speed grade (DDR3-1600), and voltage (1.35V/1.5V). Some examples include:
1. Hynix H5TQ4G63AFR series
2. Samsung K4B4G1646E series
3. Nanya NT5CB256M16DR series
4. Elpida (now Micron) EDJ4216EFBG series
Make sure to verify compatibility in terms of packaging and pin configuration.

Features

The MT41J256M16HA-125:E is a DRAM chip from Micron's DDR3 SDRAM series. Key features include:
1. Density and Organization: It has a density of 4Gb and is organized as 256M x 16 bits.
2. Speed: It supports data rates up to 1600 MT/s, with a clock speed of 1250 MHz.
3. CAS Latency: Typically supports CAS latencies ranging from 5 to 11.
4. Voltage: Operates at a standard DDR3 voltage of 1.5V.
5. Package: Comes in a 96-ball FBGA package, facilitating compact and efficient designs.
6. Temperature Range: Operates within standard commercial temperature ranges.
7. Applications: Commonly used in computing, networking, and consumer electronics that require high-speed data processing.
These features make the MT41J256M16HA-125:E suitable for applications that demand high performance and reliability in data storage and retrieval.

Pinout

The MT41J256M16HA-125:E is a DRAM chip from the DDR3 SDRAM family, specifically a 4Gb (Gigabit) component. It features a 96-ball FBGA (Fine-pitch Ball Grid Array) package. This device has a 16-bit data bus, and the memory is organized as 256M x 16 bits.
Key functions include:
- Data Storage: Provides high-speed data storage and retrieval.
- Double Data Rate (DDR): Transfers data on both the rising and falling edges of the clock signal.
- Clock Signal (CK, CK#): Controls the timing of the data transfer operations.
- Command Signals (RAS#, CAS#, WE#): Used to control memory operations like read, write, and refresh.
- Address Lines: Used to select the memory location for data access.
- Data I/O (DQ): 16 data lines for input/output operations.
- Power Supply (VDD, VDDQ): Provides power to the chip and I/O buffers.
- Ground (VSS, VSSQ): Ground connections for the chip and I/O buffers.
- ODT (On-Die Termination): Reduces signal reflections.
- RESET#: Used to reset the DRAM chip.
The pin layout is designed to support efficient high-speed memory operations in computing applications.

Manufacturer

The MT41J256M16HA-125:E is manufactured by Micron Technology, Inc. Micron is an American company that specializes in semiconductor devices, primarily focusing on memory and storage solutions. The company produces a range of products, including DRAM (Dynamic Random-Access Memory), NAND flash memory, and SSD (Solid State Drives). Micron's products are used in a variety of applications, including personal computing, mobile devices, data centers, automotive, industrial, and consumer electronics. Known for innovation in the memory technology sector, Micron plays a significant role in advancing digital storage solutions worldwide.

Application

The MT41J256M16HA-125:E is a DDR3 SDRAM chip commonly used in a variety of applications requiring fast, reliable memory solutions. Key areas include:
1. Computing: Personal computers, laptops, and workstations for efficient data handling.
2. Servers: Data centers and cloud services for high-speed data processing.
3. Networking: Routers and switches for improved data throughput.
4. Consumer Electronics: Smart TVs, gaming consoles, and set-top boxes for enhanced performance.
5. Embedded Systems: Industrial automation, automotive systems, and IoT devices for robust operation.
These applications benefit from the chip's increased bandwidth, lower power consumption, and higher density compared to previous generations.

Package

The MT41J256M16HA-125:E is a DRAM chip typically found in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package.

Frequently Asked Questions

Q: What is the memory capacity and organization of the MT41J256M16HA-125?
A: It offers 4Gbit capacity organized as 256M x 16, providing high-density volatile storage for parallel DRAM interfaces.

Q: What is the maximum clock frequency and data rate for this DDR3 SDRAM?
A: It operates at a clock frequency of 800 MHz, delivering a peak data rate of 1600 MT/s per pin.

Q: What is the supply voltage range for this component?
A: It requires a voltage supply between 1.425V and 1.575V, compliant with standard DDR3 specifications.

Q: What is the access time and temperature range for this DRAM?
A: It has a 13.75 ns access time and operates within a temperature range of 0°C to 95°C (TC) for reliable performance.

Q: Is this part recommended for new designs?
A: No, the part status is marked as "Obsolete" and "Not Verified" by DigiKey, indicating it is not recommended for new designs.

Q: What package and mounting type does the MT41J256M16HA-125 use?
A: It comes in a 96-TFBGA package (9x14 mm) and supports surface mount mounting for compact PCB layouts.

Q: What is the memory interface and format of this chip?
A: It uses a parallel memory interface and is a volatile DRAM in DDR3 SDRAM format, suitable for high-speed data transfer.