MT41J256M4JP-125:G

MT41J256M4JP-125:G is a Micron mobile DRAM device. Key points:
- Density/organization: 1 Gbit total, arranged as 256M × 4 (256 million words of 4 bits).
- Family/part type: MT41J256M4 – part of Micron’s MT41J mobile DRAM lines; JP is package code; G indicates RoHS-compliant (lead-free).
- Speed/voltage: -125 is the speed bin (timing/throughput) and voltage/timing are defined in the datasheet (typical low-voltage operation for mobile DRAM; exact values vary with mode).
- Interface: Synchronous JEDEC DRAM interface designed for mobile/embedded systems.
- Applications: Used as memory in smartphones, tablets, embedded devices, or as memory buffers in SoCs.
- How to read the name: MT = Micron; 41J256M4 = product family, density (256M) and width (4); JP = package; -125 = speed grade; :G = RoHS.
For precise electrical specs, timings, voltage ranges, packaging, and thermal data, consult the official Micron MT41J256M4JP-125:G datasheet.

Direct equivalents from other vendors are scarce. MT41J256M4JP-125:G is Micron’s 1Gb Mobile DDR2 SDRAM (256M x 4) with -125 timing and RoHS. Reliable substitutions are other Micron parts with the same die/organization and similar packaging (e.g., other MT41J256M4JP variants). For cross-refs to Samsung/Hynix, provide target package and timing, or use a distributor’s cross-reference tool. Do you need a specific package or speed?

MT41J256M4JP-125:G is Micron’s 1 Gb class Mobile SDRAM (256M × 4 organization) with a low-power DDR/SRAM design. Key features:
- Density/organization: 1 Gbit total (256 Mbit × 4)
- Interface: Mobile SDRAM with x4 data path; 8 banks
- Speed grade: -125 (125 MT/s)
- Voltage: typical low-power class (1.8V era; some variants support lower voltages)
- synchronous operation with DQS/DQ signaling
- Burst: programmable burst lengths (BL4/BL8) and burst type
- Refresh: automatic/auto-refresh support; partial array self-refresh
- Timing features: DLL, ZQ calibration
- Power management: low-power operation, suitable for mobile/embedded apps
- Package/UL: RoHS-compliant; standard Micron BGA/package variants
Note: exact voltage range and timing can vary by specific package/revision; consult the datasheet for precise specs.

Pin count: 84-ball BGA (84 pins).
Function: Micron MT41J256M4JP-125:G is a 256-Mbit x4 DDR3/DDR3L SDRAM memory device (four data I/O lines, standard address/control signals) used as system memory.

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND/NOR flash); one of the world’s largest memory makers, headquartered in Boise, Idaho.

MT41J256M4JP-125:G is a 1 Gbit (256M x 4) DDR SDRAM device. Its high density and low power suit compact, memory-intensive roles in many systems, including:
- Mobile/embedded devices (smartphones, tablets, handhelds)
- Ultra-thin laptops and portable computers
- Graphics/video buffering and frame buffers in multimedia gear
- Set-top boxes, digital TVs, cameras, and home entertainment gear
- Networking/telecom equipment and edge devices
- Automotive infotainment and telematics
- Industrial control and IoT applications needing compact RAM
Note: verify exact memory standard (DDR/DDR3/DDR4) and voltage for your design.

Fine-pitch FBGA package (FBGA-96), RoHS-compliant (lead-free).